We examine the profile of second harmonic generation(SHG)for GaAs/GaAlAs spherical quantum dots(QDs)of Woods-Saxon(WS)plus attractive inversely quadratic(AIQ)potential under the joint influence of additional factors(pressure and temperature)and structural parameters(strengths and radius).The energies and wave functions in GaAs/GaAlAs spherical QDs under WS-AIQ limiting potential are calculated using the parametric Nikiforov-Uvarov(NU)method.Depending on the calculated energies and corresponding wave functions,the SHG coefficient is examined by the iterative procedure in the density matrix method for this system.Finally,the calculated results display that a strong SHG coefficient response,and red shift or blue shift energy can be acquired by adjusting parameters.
The resolution characteristic can be obtained by the modulation transfer function （MTF） of a GaAs/GaA1As photocathode. After establishing the theoretical model of GaAs（100）-oriented atomic configuration and the formula for the ionized impurity scattering of the non-equilibrium carriers, this paper calculates the trajectories of photoelectrons in a photocathode. Thus the distribution of photoelectron spots on the emit-face is obtained, which is namely the point spread function. The MTF is obtained by Fourier transfer of the line spread function obtained from the point spread function. The MTF obtained from these calculations is shown to depend heavily on the electron diffusion length, and enhanced considerably by decreasing the electron diffusion length and increasing the doping concentration. Furthermore, the resolution is enhanced considerably by increasing the active-layer thickness, especially at high spatial frequencies. The best spatial resolution is 860 lp/mm, for the GaAs photocathode of doping concentration 1 ×10^19 cm 3 electron diffusion length 3.6 μm and the active-layer thickness 2 μm, under the 633-nm light irradiated. This research will contribute to the future improvement of the cathode＇s resolution for preparing a high performance GaAs photocathode, and improve the resolution of a low light level image intensifier.
Binding energies of shallow hydrogenic impurity in a GaAs/GaAlAs quantum dot with spherical confinement, parabolic confinement and rectangular confinement are calculated as a function of dot radius in the influence of electric field. The binding energy is calculated following a variational procedure within the effective mass approximation along with the spatial depended dielectric function. A finite confining potential well with depth is determined by the discontinuity of the band gap in the quantum dot and the cladding. It is found that the contribution of spatially dependent screening effects are small for a donor impurity and it is concluded that the rectangulax confinement is better than the parabolic and spherical confinements. These results are compared with the existing literature.
We develop a Monte Carlo （MC） tool incorporated with the three-subband approximation model to investigate the in-plane spln-polarized transport in GaAs/GaAlAs quantum well. Using the tool, the effects of the electron occupation of higher subbands and the intersuhband scattering on the spin dephasing have been studied. Compared with the corresponding results of the simple one-snbband approximation model, the spin dephasing length is reduced four times under 0.125 kV/cm of driving electric field at 300K by the MC tool incorporated with the three-subband approximation model, indicating that the three-subbarld approximation model predicts significantly shorter spin dephasing length with temperature increasing. Our simulation results suggest that the effects of the electron occupation of higher subbands and the intersubband scattering on the spln-dependent transport of GaAs 2-dhuensional electron gas need to be considered when the driving electric field exceeds the moderate value and the lattice temperature is above 100K. The simulation by using the MC tool incorporated with the three-subband approximation model also indicates that, under a eertain driving electric field and lattice temperature, larger channel widths cause spins to be depolarized faster. Ranges of the three components of the spins are different for three different injected spin polarizations due to the anisotropy of spin-orbit interaction.
