A behavioral model of the photodiode is presented.The model describes the relationship between photocurrent and incident optical power,and it also illustrates the impact of the reverse bias to the variation of the junction capacitance.According to this model,the photodiode and a CMOS receiver circuit are simulated and designed simultaneously under a universal circuit simulation environment.
The vertical cavity surface emitting laser (VCSEL) arrays and VCSEL-based optical transmission modules are investigated.It includes the VCSEL's spectral characteristic,modulation characteristic,high frequency characteristic,and compatibility with microelectronic circuit.The module consists of 1×16 VCSEL array and 16-channel lasers driver with 0.35μm CMOS circuit by hybrid integration.During the test process,the module operates well at more than 2GHz in -3dB frequency bandwidth.
A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6μm industrial CMOS technology.The mechanism of the light emitting of this device is discussed.The device is simulated by the commercial software.I-V characteristic under forward or reverse bias is simulated utilizing the commercial software.The results between simulation and experiment data are compared.The results show that it is a promising device and may find applications in light linking.
