采用物理气相传输法在(0001)面偏向<11-20>方向4°的籽晶上生长了掺氮低电阻率碳化硅(SiC)单晶。结合碳化硅邻位面生长机制,通过优化温场设计,在近平温场下生长出了晶型稳定、微管密度低、高结晶质量的低电阻率4H-SiC单晶。在加工的"epi-ready"SiC衬底上进行了同质外延,获得了光滑的外延层表面。利用该外延材料研制了600V/10 A SiC肖特基二极管,器件的直流性能与进口衬底结果相当,反向漏电成品率高达67%。另外研制了600 V/50 A SiC肖特基二极管,器件的直流性能也达到了进口衬底水平。
The continuous wave （CW） and passively Q-switched （PQS） performances of diode-pumped Nd： （LaxGd1-x）3Gd5O12 （Nd：LaGGG） at 1.33 μm are achieved for the first time to our knowledge. The maximum CW output power of 5.1 W is obtained with the optical-optical conversion efficiency of 25.3% and the slope efficiency of 26.6%. In the PQS operation, by using the V3＋：YAG crystal as the saturable absorber, the maxi- mum average output power, shortest pulse width, largest pulse energy, and highest peak power are measured to be 1.1 W, 27.54 ns, 75.78 μJ, and 2.44 kW, respectively.
