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教育部“新世纪优秀人才支持计划”(NCET-07-0590)

作品数:3 被引量:0H指数:0
相关作者:余萍谢瑞士杨隽张锦瑾李园利更多>>
相关机构:四川大学更多>>
发文基金:四川省应用基础研究计划项目教育部“新世纪优秀人才支持计划”国家自然科学基金更多>>
相关领域:理学更多>>

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高度(100)取向的Ba_(0.8)Sr_(0.2)TiO_3/LaNiO_3周期薄膜的制备及薄膜铁电性能研究
2010年
Highly(100)-oriented Ba0.8Sr0.2TiO3/LaNiO3 multilayer films have been prepared on different substrates by chemical solution deposition.The microstructure,interface,thickness and morphologies were characterized by XRD,FESEM and AFM techniques,respectively.The results reveal that the multilayer films display satisfied microstructure,clear interface,smooth surface and dense structure,especially,the orientation factor of the 4-period multilayer films can be 0.92 from XRD data and the thickness is about 500nm.The annealing processing plays an important role on the ferroelectric property of highly(100)-oriented multilayer films.
杨隽余萍
关键词:多层膜钛酸锶钡薄膜铁电性
TGA包覆的Co:CdS纳米晶的制备和稳定性研究
利用一步水相合成法,制备了TGA包覆的Co:CdS纳米晶。XRD数据表明当反应时间为1h~20h时所得到的Co:CdS纳米晶均为立方闪锌矿结构,反应时间为45h时为立方和六方共存的晶格结构;FT-IR数据显示TGA较好地...
李园利余萍陈思应谢瑞士张锦瑾
关键词:CDS纳米晶自净化
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ZnS:Co^(2+)半导体纳米晶的制备及性能研究
2010年
ZnS∶Co2+ nanocrystals were prepared in aqueous solution by both one-step and two-step methods.The surface of the prepared ZnS∶Co2+ nanocrystals was modified by mercaptoacetic acid(TGA).The UV-vis absorption spectroscopy was employed as a direct probe to detect the location of Co2+ dopant in ZnS∶Co nanocrystals.The transition of Co2+4T1g(F)→4T1g(P)was observed from the ZnS∶Co2+ nanocrystals derived by the one-step sample,and the Co2+ 4A2(F)→4T1(P)transition was detected from the ZnS∶Co2+ nanocrystals derived by the two-step sample.The results indicate that Co2+ existed on the surface instead of in the lattice of ZnS nanocrystals derived by the one-step method.And for those ZnS∶Co2+ nanocrystals by using the two-step method,Co2+ were co-precipitated in the lattice of ZnS nanocrystals.And additionally,the band gap of the lattice co-precipitated doped ZnS∶Co2+ nanocrystals was narrower than the pure ZnS samples.
张锦瑾余萍陈思应谢瑞士
关键词:巯基乙酸紫外-可见吸收光谱
Co:CdS半导体纳米晶的合成、晶体结构及光学性质
2011年
利用水相合成技术,以巯基乙酸(MAA)为稳定剂,合成了Co:CdS半导体纳米晶。XRD结果表明,得到的掺杂纳米晶为闪锌矿结构,平均粒径约为3.9 nm;FT-IR结果表明,MAA成功包覆在Co:CdS纳米晶的表面;UV-vis吸收谱表明,Co离子成功掺入CdS晶格中;PL结果表明,掺杂离子浓度过大会导致CdS发光淬灭;并讨论了相关机理。
李园利谢瑞士余萍
关键词:CDS掺杂半导体纳米晶光学性质
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