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北京市自然科学基金(1092014)

作品数:5 被引量:8H指数:2
相关作者:王明文郭佳林常永勤龙毅陆映东更多>>
相关机构:北京科技大学北京大学更多>>
发文基金:北京市自然科学基金国家自然科学基金教育部“新世纪优秀人才支持计划”更多>>
相关领域:一般工业技术电子电信化学工程理学更多>>

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5 条 记 录,以下是 1-5
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Influence of Co Content on Raman and Photoluminescence Spectra of Co Doped ZnO Nanowires被引量:3
2012年
Co doped ZnO nanowires with different Co contents have been fabricated by a chemical vapor deposition method. X-ray diffraction results show that all the samples are of single phase and crystallize in wurtzite ZnO structure. The lattice parameter a increases with increasing Co content, while the parameter c has no obvious change with increasing Co. Raman spectra show that the nonpolar E2(High) mode becomes broad and weak with the doping of Co, which indicates that the incorporation of Co causes structural disorder in the crystalline columnar ZnO lattice. The photoluminescence spectra exhibit that the position of the ultraviolet emission shifts to short wavelength and the intensity decreases with increasing Co. The green emission is affected by two contrary factors. It is increased by the introduced defects, but suppressed by the interaction between Co doping and native defects and the later affects it more significantly.
Y.Q. ChangP.W. WangS.L. NiY. LongX.D. Li
关键词:CO含量荧光光谱拉曼光谱ZNO纤锌矿结构
Sn催化的Ga掺杂ZnO纳米线的制备及其光致发光性能研究被引量:1
2011年
采用化学气相沉积的方法,以Sn粉为催化剂制备出大长径比的Ga掺杂ZnO纳米线。采用扫描电子显微镜观察制备的产物,发现样品为直径约25~90nm的纳米线。通过比较不同Ga掺杂含量样品的室温光致发光谱,发现一定掺杂含量的Ga可以提高ZnO纳米线的紫外发光强度,同时,Ga的掺杂也会引起ZnO紫外发光峰的蓝移。随着Ga含量的增加,蓝移程度越来越小,甚至发生红移。Sn的引入只对Ga掺杂ZnO纳米线的蓝绿光有贡献。
陆映东常永勤张敬民王明文郭佳林王永威龙毅
关键词:光致发光化学气相沉积
常压条件下制备SnO_2纳米线及其光学性能研究被引量:3
2009年
在常压条件下采用气相沉积方法制备出SnO2纳米线,X射线衍射和Raman光谱结果均表明制备出来的产物为金红石结构。在样品的光致发光谱中观察到缺陷发光峰。研究还发现蒸发源及其放置时间在SnO2纳米线的形成过程中起重要的作用。
陆映东常永勤孔广志王明文郭佳林龙毅张寅虎林杰
关键词:SNO2纳米线常压气相沉积光致发光
Synthesis and Room Temperature Ferromagnetism of Flower-shaped Mn Doped ZnO Nanostructures被引量:1
2011年
Large-scale flower-shaped Mn doped ZnO nanostructures have been grown on silicon substrates by simple thermal evaporation at atmospheric pressure.The flower-shaped nanostructure makes up of many nanorods,which are rooted in one center.Analysis of X-ray diffraction,high-resolution transmission electron microscopy and Raman spectra results reveal that the products are of single phase with wurtzite structure.Elemental mapping results show that no impurity clusters exist in the doped materials.The photoluminescence spectra demonstrate that many oxygen vacancies exist in the doped materials,and the crystal quality is improved and the content of oxygen vacancies is decreased by annealing treatment.The flower-shaped Mn doped ZnO nanostructures exhibit ferromagnetic ordering above room temperature,and its magnetization is decreased by the annealing treatment,which indicates that the magnetic behavior of the doped materials may be related to the interaction between Mn doping and the oxygen vacancies.
Y.Q. ChangP.W. WangR.H. TangQ.L. SunY. Long
关键词:MN掺杂花形高分辨透射电子显微镜
Sn掺杂ZnO半导体纳米线的制备、表征及光学性能
2011年
采用化学气相沉积法获得了Sn掺杂含量约为2.4%(原子分数)的Sn掺杂ZnO半导体纳米线。X射线衍射结果表明,Sn的掺杂并没有改变ZnO的纤锌矿结构。掺杂纳米线的室温光致发光光谱在409.2nm和498.0nm处出现了蓝绿光发光峰。探讨了其发光机制,认为前者可能来源于从导带到Zn空位形成的浅受主能级的跃迁以及从氧空位形成的浅施主能级到价带的跃迁;而后者来源于从氧空位形成的浅施主能级到锌空位浅受主能级的跃迁。
郭佳林常永勤王明文陆映东王彪龙毅
关键词:ZNO纳米线光致发光发光机制CVD
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