Transport characteristics of single crystal bismuth films on Si（111）-7×7 are found to be metallic or insulating at temperature below or above Tc, respectively. The transition temperature Tc decreases as the film thickness increases. By combining thickness dependence of the films resistivity, we find the insulating behaviour results from the states inside film, while the metallic behaviour originates from the interface states. We show that quantum size effect in a Bi film, such as the semimetal-to-semiconductor transition, is only observable at a temperature higher than Tc.
