Using NH3 as nitrogen source gas,N-doped ZnO(ZnO:N) thin films in c-axis orientation were deposited on glass substrates by radio frequency magnetron sputtering at room temperature.The ZnO:N thin films display significant increase of resistivity and decrease of photoluminescence intensity.As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor.The fabricated devices on glasses demonstrate typical field effect transistor characteristics.
The energy band structure with type-I alignment at the PbTe/CdTe(111) heterojunction interface is determined by the ultraviolet photoelectron spectrum using synchrotron radiation.The valence band and conduction band offsets are obtained to be 0.09±0.12 and 1.19±0.12 eV,respectively.These results are in agreement with theoretically predicted ones.The accurate determination of the valence band and conduction band offsets is useful for the fundamental understanding of the mid-infrared light emission from the PbTe/CdTe heterostructures and its application in devices.
