Two strain-state samples of GaN,labelled the strain-relief sample and the quality-improved sample,were grown by hydride vapour phase epitaxy (HVPE),and then characterized by high-resolution X-ray diffraction,photoluminescence and optical microscopy.Two strain states of GaN in HVPE,like 3D and 2D growth modes in metal-organic chemical vapour deposition (MOCVD),provide an effective way to solve the heteroepitaxial problems of both strain relief and quality improvement.The gradual variation method (GVM),developed based on the two strain states,is characterized by growth parameters' gradual variation alternating between the strain-relief growth conditions and the quality-improved growth conditions.In GVM,the introduction of the strain-relief amplitude,which is defined by the range from the quality-improved growth conditions to the strain-relief growth conditions,makes the strain-relief control concise and effective.The 300-μm thick bright and crack-free GaN film grown on a two-inch sapphire proves the effectiveness of GVM.
Wet etching has been widely used in defect evaluation for Ga-face GaN and surface roughness for N-face GaN dodecagonal pyramids has been fabricated on laser-lift-off N-face GaN by hot phosphor acid etching.The dodecagonal pyramid shows twelve facets including six{20-2-3}and six{22-4-5}planes.From cross-sectional TEM image,it is shown that the pyramid corresponds to the top of the edge dislocation.Compared with hexagonal pyramid-surface light emitting diodes(LEDs)etched by commonly used photoelectrochemical(PEC)process in KOH aqueous,the dodecagonal pyramid-surface LEDs show improved light extraction efficiency because of more facets,which effectively reduces the total internal reflection.
QI ShengLi,CHEN ZhiZhong,SUN YongJian,FANG Hao,TAO YueBin,SANG LiWen,TIAN PengFei,DENG JunJing,ZHAO LuBing,YU TongJun,QIN ZhiXin&ZHANG GuoYi State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China
We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiN x interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer.X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiN x interlayer.The electrical properties are also improved.For example,electron mobility and sheet resistance are reduced from high resistance to 31.6 cm 2 /(V · s) and 460 /respectively.Owing to the significant effect of the SiN x interlayer,a-plane LEDs are realized.Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated.The emission peak remains constant when the injection current increases to over 20 mA.
We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based light-emitting diode (LED) packages. A numerical study was carried out with parametric model to understand the junction temperature variation due to bonding medium defects. Transient thermal measurement was performed to evaluate LED’s junction temperature. Thermal resistance from chip to lead frame was 20 K/W in our sample LED. It was suggested that only 60% of the surface area of the bonding medium was involved in the thermal conduction. This result was also supported by the SEM image. Blocking of thermal path induced by ineffective area of the bonding medium was regarded as a factor of its thermal resistance. Thus, the effective area of the bonding medium should be included in the FEM model and considered as another important factor in high power LED’s thermal management.
JIANG YuXuan1, LI Zheng1, SUN YongJian1, YU TongJun1, CHEN ZhiZhong1, ZHANG GuoYi1, ZHANG GuangChen2 & FENG ShiWei2 1 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Au/Sn solder bonding on Si substrates was used to fabricate the GaN-based vertical structure light emitting diodes (VSLEDs). The phase reaction of Au/Sn solder under different bonding conditions was investigated by the measurement of electron back scattering diffraction (EBSD), and the characteristics of VSLED were analyzed by scanning acoustic microscope (SAM), Raman scattering, current-voltage (I-V) and light output-current (L-I) curves. After the bonding process, horizontal stripes of Au/Sn phase (δ phase) and Au5Sn phase (ζ phase) were redirected to vertical stripes, and δ phase tended to move to the solder joint. Sn interstitial diffusion led to the distribution of δ phase and voids in Au/Sn solder, which could be seen in SAM and SEM images. Vertical distribution of the δ phase and ζ phase with proper voids in the Au/Sn bonding layer showed the best bonding quality. Good bonding quality led to little shift of the E2-high mode of Raman spectra peak in GaN after laser lift off (LLO). It also caused more light extraction and forward bias reduction to 2.9 V at 20 mA.
TIAN PengFei, SUN YongJian, CHEN ZhiZhong, QI ShengLi, DENG JunJing, YU TongJun, QIN ZhiXin & ZHANG GuoYi State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
