We develop a model for the effect of thermal annealing on forming In-N clusters in GaInNP according to thermodynamics.The average energy variation for forming an In-N bond in the model is estimated according to the theoretical calculation.Using the model,the added number of In-N bonds per mol of InGaNP,the added number of nearest-neighbor In atoms per N atom and the average number of nearest-neighbor In atoms per N atom after annealing are calculated.The different function of In-N clusters in InGaNP and InGaN is also discussed,which is due to the different environments around the In-N clusters.
