Based on the Lindemann melting model,a model related to gold nanoparticle size and melting temperature for VLS grown silicon nanowire is proposed.Eutectic temperatures of Au-Si with different gold sizes have been calculated using the model and are in agreement with the experimental results.This model has been demonstrated to be reasonable,and it can be used to determine the growth temperature of silicon nanowire.
A silicon(SiNW) nanowire device,made by the bottom-up method,has been assembled in a MEMS device for measuring stress in cantilevers.The process for assembling a SiNW on a cantilever has been introduced.The current as a function of the voltage applied to a SiNW have been measured,and the different resistances before and after cantilever releasing have been observed.A parameter,η,has been derived based on the resistances.For a fixed sample,a linear relationship between η and the stress in the cantilever has been observed;and,so,it has been demonstrated that the resistance of SiNW can reflect the variation of the cantilever stress.
