A new lateral insulated-gate bipolar transistor with a controlled anode(CA-LIGBT) on silicon-on-insulator (SOI) substrate is reported.Benefiting from both the enhanced conductivity modulation effect and the high resistance controlled electron extracting path,CA-LIGBT has a faster turn-off speed and lower forward drop, and the trade-off between off-state and on-state losses is better than that of state-of-the-art 3-D NCA-LIGBT,which we presented earlier.As the simulation results show,the ratios of figure of merit(FOM) for CA-LIGBT compared to that of 3-D NCA-LIGBT and conventional LIGBT are 1.45:1 and 59.53:1,respectively.And,the new devices can be created by using additional silicon direct bonding(SDB).So,from the power efficiency point of view,the proposed CA-LIGBT is a promising device for use in power ICs.
