Heterostructures from mechanically-assembled stacks of two-dimensional materials allow for versatile electronic device applications. Here, we demonstrate the intrinsic charge transport behaviors in graphene-black phosphorus heterojunction devices under different charge carrier densities and temperature regimes. At high carrier densities or in the ON state,tunneling through the Schottky barrier at the interface between graphene and black phosphorus dominates at low temperatures. With temperature increasing, the Schottky barrier at the interface is vanishing, and the channel current starts to decrease with increasing temperature, behaving like a metal. While at low carrier densities or in the OFF state, thermal emission over the Schottky barrier at the interface dominates the carriers transport process. A barrier height of ~67.3 meV can be extracted from the thermal emission-diffusion theory.
In order to understand the Kondo effect observed in molecular systems, first-principles calculations have been widely used to predict the ground state properties of molecules on metal substrates. In this work, the interaction and the local magnetic moments of magnetic molecules (3d-metal phthalocyanine and tetraphenylporphyrin molecules) on noble metal surfaces are investigated based on the density functional theory. The calculation results show that the dz2 orbital of the transition metal atom of the molecule plays a dominant role in the molecule-surface interaction and the adsorption energy exhibits a simple declining trend as the adsorption distance increases. In addition, the Au(111) surface generally has a weak interaction with the adsorbed molecule compared with the Cu(111) surface and thus serves as a better candidate substrate for studying the Kondo effect. The relation between the local magnetic moment and the Coulomb interaction U is examined by carrying out the GGA+U calculation according to Dudarev's scheme. We find that the Coulomb interaction is essential for estimating the local magnetic moment in molecule-surface systems, and we suggest that the reference values of parameter U are 2 eV for Fe and 2-3 eV for Co.
We report the direct measurements of conductivity and mobility in millimeter-sized single-crystalline graphene on SiO_2/Si via van der Pauw geometry by using a home-designed four-probe scanning tunneling microscope(4P-STM). The gate-tunable conductivity and mobility are extracted from standard van der Pauw resistance measurements where the four STM probes contact the four peripheries of hexagonal graphene flakes, respectively. The high homogeneity of transport properties of the single-crystalline graphene flake is confirmed by comparing the extracted conductivities and mobilities from three setups with different geometry factors. Our studies provide a reliable solution for directly evaluating the entire electrical properties of graphene in a non-invasive way and could be extended to characterizing other two-dimensional materials.
