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国家重点基础研究发展计划(2007CB924903)

作品数:3 被引量:3H指数:1
相关作者:乔瑞敏陈延学梅良模田玉峰张云鹏更多>>
相关机构:山东大学更多>>
发文基金:国家自然科学基金国家重点基础研究发展计划山东省自然科学杰出青年基金更多>>
相关领域:电子电信理学自然科学总论更多>>

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Spin injection in the multiple quantum-well LED structure with the Fe/AlO_x injector
2010年
A spin-injection/-detection device has been fabricated based on the multiple quantum well light emitting diode (LED) structure. It is found that only a broad electroluminescence (EL) peak of a full width at half maximum of 8.6 nm appears at the wavelength of 801 nm in EL spectra with a circular luminescence polarization degree of 18%, despite PL spectra always show three well resolved peaks. The kinetic energy gained by injected electrons and holes in their drift along opposite directions broadens the EL peak, and makes three EL peaks converge together. The same process also destroys the injected spin polarization of electrons mainly dominated by the Bir-Aronov-Pikus spin relaxing mechanism.
Hao WuHouZhi ZhengJian LiuGuiRong LiPing XuHui ZhuHao ZhangJianHua Zhao
关键词:SPINTRONICSEMITTINGDIODEMULTIPLE
Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs
2010年
We report that,by linearly polarized pumping of different wavelengths,Kerr transients appear at zero magnetic field only in the case when GaMnAs samples are initialized at 3 K by first applying a 0.8 Tesla field and then returning to zero field.We find that,instead of magnetization precession,the near-band gap excitation induces a coherent out-of-plane turning of magnetization,which shows very long relaxation dynamics with no precession.When photon energy increases,the peak value of the Kerr transient increases,but it decays rapidly to the original slow transient seen under the near-band-gap excitation.
LUO Jing,ZHENG HouZhi,SHEN Chao,ZHANG Hao,ZHU Ke,ZHU Hui,LIU Jian,LI GuiRong,JI Yang & ZHAO JianHua State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
关键词:DILUTETIME-RESOLVEDKERRPRECESSION
浓磁半导体材料的制备、磁性和自旋极化的输运被引量:3
2011年
成功制备出过渡金属元素含量高的Zn1-xCoxO、Ti1-xCoxO2、(In1-xCox)2O3铁磁半导体(浓磁半导),发现这些氧化物浓磁半导体具有高于室温的居里温度、高自旋极化率、巨磁光克尔效应等优良材料特性。还对浓磁半导的输运性质进行了系统的实验和理论研究,提出了自旋依赖的电子变程跃迁理论模型。这些用新方法制备的氧化物浓磁半导体,不同于常规的稀磁半导体,有望成为高效自旋注入源和半透明磁光新材料。
颜世申梅良模陈延学刘国磊宋红强张云鹏田玉峰乔瑞敏
关键词:磁性半导体铁磁性
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