We investigate the effect of interaction, temperature, and anisotropic parameter on the quantum phase transitions in an anisotropic square-octagon lattice with fermions under the framework of the single band Hubbard model through using the combination of cellular dynamical mean field theory and a continuous time Monte Carlo algorithm. The competition between interaction and temperature shows that with the increase of the anisotropic parameter, the critical on-site repulsive interaction for the metal-insulator transition increases for fixed temperature. The interaction-anisotropic parameter phase diagram reveals that with the decrease of temperature, the critical anisotropic parameter for the Mott transition will increase for fixed interaction cases.
The dependences of Fermi-level pinning on interface state densities for the metal-dielectric, ploycrystalline silicon-dielectric, and metal silicide-dielectric interfaces are investigated by calculating their effective work functions and their pinning factors. The Fermi-level pinning factors and effective work functions of the metal-dielectric interface are observed to be more susceptible to the increasing interface state densities, differing significantly from that of the ploycrystalline silicon-dielectric interface and the metal silicide-dielectric interface. The calculation results indicate that metal silicide gates with high-temperature resistance and low resistivity are a more promising choice for the design of gate materials in metal-oxide semiconductor（MOS） technology.
