A uniaxial magnetic anisotropy Co film was grown on a single-crystal Ba Ti O3(BTO) substrate. The strain yielded by the voltage-induced ferroelastic domain switching in the BTO substrate was recorded by atomic force microscope and modulated the magnetism of the Co film. The manipulation of the magnetism of the Co film is experimentally demonstrated by voltage dependence of magnetic hysteresis loops measured via magneto-optic Kerr effect.
A three-terminal device based on electronic phase separated manganites is suggested to produce high performance resistive switching. Our Monte Carlo simulations reveal that the conductive filaments can be formed/annihilated by reshaping the ferromagnetic metal phase domains with two cross-oriented switching voltages. Besides, by controlling the high resistance state(HRS) to a stable state that just after the filament is ruptured, the resistive switching remains stable and reversible, while the switching voltage and the switching time can be greatly reduced.
Voltage-modified magneto-optical Kerr effect(MOKE) is widely used to describe the converse magnetoelectric(ME) effect in the ferroelectric/ferromagnetic(FE/FM) heterostructures. However, the applied voltage can possibly give rise to electro-optical effect of the FE layer, which would also affect the Kerr signals in the MOKE system. Here, we used an AC voltage to modulate the magnetization in the Ni/Pb(Zr0.52Ti0.48)O3(PZT) heterostructures with different pre-polarization states of the PZT layers to investigate the complexity of the Kerr signals. The results suggested that the voltage control of Kerr signal contained several origins; however, the straininduced ME effect dominated in the ME effect in the heterostructures.
The multiferroicity in the RMn_2O_5 family remains unclear, and less attention has been paid to its dependence on high-temperature(high-T) polarized configuration. Moreover, no consensus on the high-T space group symmetry has been reached so far. In view of this consideration, one may argue that the multiferroicity of RMn_2O_5 in the low-T range depends on the poling sequence starting far above the multiferroic ordering temperature. In this work, we investigate in detail the variation of magnetically induced electric polarization in GdMn_2O_5 and its dependence on electric field poling routine in the high-T range. It is revealed that the multiferroicity does exhibit qualitatively different behaviors if the high-T poling routine changes, indicating the close correlation with the possible high-T polarized state. These emergent phenomena may be qualitatively explained by the co-existence of two low-T polarization components, a scenario that was proposed earlier.One is the component associated with the Mn^(3+)–Mn^(4+)–Mn^(3+) exchange striction that seems to be tightly clamped by the high-T polarized state, and the other is the component associated with the Gd Mn^(3+)–Mn^(4+)–Mn^(3+) exchange striction that is free of the clamping. The present findings may offer a different scheme for the electric control of the multiferroicity in RMn_2O_5.
