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国家高技术研究发展计划(2011AA10305)

作品数:9 被引量:12H指数:2
相关作者:潘敏冯军李竹王志功杨格亮更多>>
相关机构:东南大学合肥工业大学更多>>
发文基金:国家高技术研究发展计划国家重点基础研究发展计划国家自然科学基金更多>>
相关领域:电子电信更多>>

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9 条 记 录,以下是 1-9
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A 10Gb/s combined equalizer in 0.18μm CMOS technology for backplane communication
2015年
This paper presents a 10Gb/s high-speed equalizer as the front-end of a receiver for backplane communication.The equalizer combines an analog equalizer and a two-tap decision-feedback equalizer in a half-rate structure to reduce the inter-symbol-interference(ISI) of the communication channel.By employing inductive peaking technique for the high-frequency boost circuit,the bandwidth and the boost of the analog equalizer are improved.The decision-feedback equalizer optimizes the size of the CML-based circuit such as D flip-flops(DFF) and multiplex(MUX),shortening the feedback path delay and speeding up the operation considerably.Designed in the 0.18μm CMOS technology,the equalizer delivers 10Gb/s data over 18-in FR4 trace with 28-dB loss while drawing27-mW from a 1.8-V supply.The overall chip area including pads is 0.6×0.7mm^2.
张明科Hu Qingsheng
关键词:判决反馈均衡器CMOS技术接收机前端符号间干扰
IC design of low power, wide tuning range VCO in 90 nm CMOS technology被引量:1
2014年
A low power VCO with a wide tuning range and low phase noise has been designed and realized in a standard 90 nm CMOS technology. A newly proposed current-reuse cross-connected pair is utilized as a negative conductance generator to compensate the energy loss of the resonator. The supply current is reduced by half compared to that of the conventional LC-VCO. An improved inversion-mode MOSFET(IMOS) varactor is introduced to extend the capacitance tuning range from 32.8% to 66%. A detailed analysis of the proposed varactor is provided. The VCO achieves a tuning range of 27–32.5 GHz, exhibiting a frequency tuning range(FTR) of 18.4%and a phase noise of –101.38 dBc/Hz at 1 MHz offset from a 30 GHz carrier, and shows an excellent FOM of –185dBc/Hz. With the voltage supply of 1.5 V, the core circuit of VCO draws only 2.1 m A DC current.
李竹王志功李智群李芹刘法恩
关键词:频率调谐范围CMOS技术IC设计VCO低相位噪声
A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique被引量:1
2012年
A CMOS low-noise amplifier(LNA) operating at 31.7 GHz with a low input return loss(S_(11)) and high linearity is proposed.The wideband input matching was achieved by employing a simple LC compounded network to generate more than one S_(11) dip below -10 dB level.The principle of the matching circuit is analyzed and the critical factors with significant effect on the input impedance(Z_(in)) are determined.The relationship between the input impedance and the load configuration is explored in depth,which is seldom concentrated upon previously. In addition,the noise of the input stage is modeled using a cascading matrix instead of conventional noise theory. In this way Z_(in) and the noise figure can be calculated using one uniform formula.The linearity analysis is also performed in this paper.Finally,an LNA was designed for demonstration purposes.The measurement results show that the proposed LNA achieves a maximum power gain of 9.7 dB and an input return loss of < -10 dB from 29 GHz to an elevated frequency limited by the measuring range.The measured input-referred compression point and the third order inter-modulation point are -7.8 and 5.8 dBm,respectively.The LNA is fabricated in a 90-nm RF CMOS process and occupies an area of 755×670μm^2 including pads.The whole circuit dissipates a DC power of 24 mW from one 1.3-V supply.
杨格亮王志功李智群李芹李竹刘法恩
关键词:高线性度LNAGHZ
12.5Gb/s 0.18μm CMOS时钟与数据恢复电路设计被引量:3
2014年
采用0.18μm CMOS工艺设计实现了一个12.5 Gb/s半速率时钟数据恢复电路(CDR)以及1:2分接器,该CDR及分接器是串行器/解串器(SerDes)接收机中的关键模块,为接收机系统提供6.25GHz的时钟及经二分接后速率降半的6.25Gb/s数据.该电路包括Bang-bang型鉴频鉴相器(PFD)、四级环形压控振荡器(VCO)、V/I转换器、低通滤波器(LPF)、1:2分接器等模块,其中PFD采用一种新型半速率的数据采样时钟型结构,能提高工作速率达到12.5 Gb/s.芯片测试结果显示,在1.8V的工作电压下,VCO中心频率在6.25GHz时,调谐范围约为1GHz;输入12Gb/s、长度为231-1的伪随机数据时,得到6GHz时钟的峰峰抖动为9.12ps,均方根(RMS)抖动为1.9ps;整个系统工作性能良好,二分接器输出数据眼图清晰,电路核心模块功耗为150mW,整体芯片面积0.476×0.538mm2.
潘敏冯军杨婧杨林成
Design of improved CMOS phase-frequency detector and charge-pump for phase-locked loop被引量:1
2014年
Two essential blocks for the PLLs based on CP, a phase-frequency detector(PFD) and an improved current steering charge-pump(CP), are developed. The mechanisms for widening the phase error detection range and eliminating the dead zone are analyzed and applied in our design to optimize the proposed PFD. To obtain excellent current matching and minimum current variation over a wide output voltage range, an improved structure for the proposed CP is developed by fully utilizing many additional sub-circuits. Implemented in a standard 90-nm CMOS process, the proposed PFD achieves a phase error detection range from –354° to 354° and the improved CP demonstrates a current mismatch of less than 1.1% and a pump-current variation of 4% across the output voltage,swinging from 0.2 to 1.1 V, and the power consumption is 1.3 m W under a 1.2-V supply.
刘法恩王志功李智群李芹陈胜
关键词:CMOS工艺电荷泵电流变化相位误差
A 3.16–7 GHz transformer-based dual-band CMOS VCO
2015年
A dual-band, wide tuning range voltage-controlled oscillator that uses transformer-based fourth-order(LC) resonator with a compact common-centric layout is presented. Compared with the traditional wide band(VCO), it can double frequency tuning range without degrading phase noise performance. The relationship between the coupling coefficient of the transformer, selection of frequency bands, and the quality factor at each band is investigated. The transformer used in the resonator is a circular asymmetric concentric topology. Compared with conventional octagon spirals, the proposed circular asymmetric concentric transformer results in a higher qualityfactor, and hence a lower oscillator phase noise. The VCO is designed and fabricated in a 0.18- m CMOS technology and has 75% wide tuning range of 3.16–7.01 GHz. Depending on the oscillation frequency, the VCO current consumption is adjusted from 4.9 to 6.3 m A. The measured phase noises at 1 MHz offset from carrier frequencies of 3.1, 4.5, 5.1, and 6.6 GHz are –122.5, –113.3, –110.1, and –116.8 d Bc/Hz, respectively. The chip area, including the pads, is 1.20.62 mm2 and the supply voltage is 1.8 V.
李竹王志功李智群李芹刘法恩
关键词:CMOS技术VCO双频段频率调谐范围
低功耗0.18μm 10Gbit/s CMOS 1∶4分接器设计被引量:2
2013年
为了实现光纤通信系统中高速分接器低功耗的需求,采用0.18μm CMOS工艺实现了一个全CMOS逻辑10 Gbit/s 1∶4分接器.整个系统采用半速率树型结构,由1∶2分接单元、2分频器单元以及缓冲构成,其中锁存器单元均采用动态CMOS逻辑电路,缓冲由传输门和反相器实现.在高速电路设计中采用CMOS逻辑电路,不但可以减小功耗和芯片面积,其输出的轨到轨电平还能够提供大的噪声裕度,并在系统集成时实现与后续电路的无缝对接.测试结果表明,在1.8 V工作电压下,芯片在输入数据速率为10 Gbit/s时工作性能良好,芯片面积为0.475 mm×0.475 mm,核心功耗仅为25 mW.
潘敏冯军
关键词:分接器低功耗
A 14.5Gb/s word alignment circuit in 0.18μm CMOS technology for high-speed SerDes
2014年
This paper presents a word alignment circuit for high speed SerDes system.By using pipeline structure and circuit optimization techniques,the speed of the aligner is increased,and its performance is improved further through adopting the full custom design method.The proposed word aligner has fabricated in 0.18μm CMOS technology with total area of 1.075 ×0.775mm^2 ̄ including I/O pad.Measurement results show that this circuit achieves the maximum data rate of 14.5Gb/s,while consuming a total power of 34.9mW from a 1.8V supply.
阮伟华Hu Qingsheng
关键词:CMOS技术电路实现解串器
CMOS毫米波低功耗超宽带共栅低噪声放大器(英文)被引量:4
2014年
陈述了一个基于单端共栅与共源共栅级联结构的超宽带低噪声放大器(LNA).该LNA用标准90-nm RFCMOS工艺实现并具有如下特征:在28.5~39 GHz频段内测得的平坦增益大于10 dB;-3 dB带宽从27~42 GHz达到了15 GHz,这几乎覆盖了整个Ka带;最小噪声系数(NF)为4.2dB,平均NF在27 ~ 42 GHz频段内为5.1 dB;S11在整个测试频段内小于-11 dB.40 GHz处输入三阶交调点(IIP3)的测试值为+2 dBm.整个电路的直流功耗为5.3 mW.包括焊盘在内的芯片面积为0.58 mm×0.48 mm。
杨格亮王志功李智群李芹刘法恩李竹
关键词:毫米波宽带
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