The infuence of(Li,Ce)doping on the electrical properties of bismuth layer Sr_(2)Bi_(4)Ti_(5)O_(18)[abbreviated to SBTi-(Li,Ce)_(x/2)]ceramics was investigated.X-ray difraction analy sisshowed that all the ceramic samples were'single-phase compounds.The(Li,Ce)modification sig.nificantly decreased the dielectric loss of Sr,Bi,Ti,O 1s ceramics and greatly improved the piezo-electric activity.At x/2=0.0125,the SBTi-(Li,Ce)_(x/2)ceramics exhibited the excellent propertieswith high remnant polarization(Pr=9.3μc/cm^(2))and high Curie temperat ure(T_(c)=299°C).Meanwhijle,the SBTi-(Li,Ce)_(0.0125)ceramics had the largest piezoelectric constant(d_(33)=26 pC/N).Theresultsshowed that the SBTi-(Li,Ce)_(x/2)ceramic was a promisinglead-free piezoelectric mat erial.
