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国家自然科学基金(60836004)

作品数:28 被引量:63H指数:4
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28 条 记 录,以下是 1-10
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The effect of P^+ deep well doping on SET pulse propagation被引量:7
2012年
The change of P+ deep well doping will affect the charge collection of the active and passive devices in nano-technology,thus affecting the propagated single event transient(SET) pulsewidths in circuits.The propagated SET pulsewidths can be quenched by reducing the doping of P+ deep well in the appropriate range.The study shows that the doping of P+ deep well mainly affects the bipolar amplification component of SET current,and that changing the P+ deep well doping has little effect on NMOS but great effect on PMOS.
QIN JunRuiCHEN ShuMingLIU BiWeiLIU FanYuCHEN JianJun
关键词:QUENCHING
A-Z-A型石墨烯场效应晶体管吸附效应的第一性原理研究被引量:1
2012年
利用第一性原理的计算方法,研究了A-Z-A型GNR-FET的电子结构和输运性质及其分子吸附效应.得到了以下结论:纯净的A-Z-A型GNR-FET具有典型的双极型晶体管特性,吸附分子的存在会使纳米带能隙变小.对于吸附H,H_2,H_2O,N_2,NO,NO_2,O_2,CO_2和SO_2分子的情况,A-Z-A型GNR-FET仍然保持着场效应晶体管的基本特征,但吸附不同类型的分子会使GNR-FET的输运特性发生不同程度的改变;对于吸附OH分子的情况,输运特性发生了本质的改变,完全不具有场效应晶体管的特性.这些研究结果将有助于石墨烯气体探测器的工程实现,并对应用于不同环境巾GNR-FET的设计具有重要指导意义.
秦军瑞陈书明张超陈建军梁斌刘必慰
关键词:石墨烯纳米带石墨烯晶体管分子吸附电子结构
Modeling to predict the time evolution of negative bias temperature instability(NBTI) induced single event transient pulse broadening
2012年
An analytical model is proposed to calculate single event transient (SET) pulse width with bulk complementary metal oxide semiconductor (CMOS) technology based on the physics of semiconductor devices. Combining with the most prevalent negative bias temperature instability (NBTI) degradation model, a novel analytical model is developed to predict the time evolution of the NBTI induced SET broadening in the production, and NBTI experiments and three-dimensional numerical device simulations are used to verify the model. At the same time, an analytical model to predict the time evolution of the NBTI induced SET broadening in the propagation is also proposed, and NBTI experiments and the simulation program with integrated circuit emphasis (SPICE) are used to verify the proposed model.
CHEN ShuMingCHEN JianJunCHI YaQingLIU FanYuHE YiBai
折叠式共源共栅运算放大器的SET效应分析
本文对折叠式共源共栅运算放大器的SET效应进行了研究,基于电路级SET轰击实验,指出了低带宽折叠式共源共栅运算放大器(Folded Cascode OPAMP)对SET电压或电流脉冲具有很好的抑制效果。负载电容和等效跨导...
吕洁洁孙永节尹湘江梁斌
关键词:折叠式共源共栅
Investigation on Channel Hot Carrier Degradation of Ultra Deep Submicron SOI pMOSFETs
The bias dependence of Channel Hot Carrier (CHC)degradation in 0.18μm SOI pMOSFETs is investigated in this pap...
Liang-Xi HuangXia AnFei TanWei-Kang WuRu Huang
关键词:SOICHC
NBTI效应导致SET脉冲在产生与传播过程中的展宽被引量:4
2011年
本文研究了负偏置温度不稳定性(NBTI)对单粒子瞬态(SET)脉冲产生与传播过程的影响.研究结果表明:NBTI能够导致SET脉冲在产生与传播的过程中随时间而不断展宽.本文还基于工艺计算机辅助设计模拟软件(TCAD)进行器件模拟,提出了一种在130nm体硅工艺下,计算SET脉冲宽度的解析模型,并结合NBTI阈值电压退化的解析模型,建立了预测SET脉冲宽度在产生的过程中随PMOS器件的NBTI退化而不断展宽的解析模型,TCAD器件模拟的结果与解析模型的预测一致;本文还进一步建立了预测SET脉冲宽度在传播的过程中随PMOS器件的NBTI退化而不断展宽的解析模型,SPICE电路模拟的结果与解析模型所预测的结论一致.
陈建军陈书明梁斌刘征刘必慰秦军瑞
关键词:脉冲展宽解析模型
基于自热修正的SOI NMOSFETs热载流子注入效应寿命预测方法
2014年
自热效应SHE(self-heating effect)是SOI MOSFETs可靠性研究的关键问题之一.在热载流子注入HCI(hot carrier injection)应力下会导致自热效应加剧,低估器件工作寿命,使得寿命预测不准.本文提出了一种基于直流HCI应力下的0.18μmPD-SOINMOSFETs可靠性寿命预测方法.通过栅电阻法提取沟道中因自热效应产生的温度,采用自热修正后的衬底电流/漏电流比率模型预测PD-SOI NMOSFETs在正常工作电压下的寿命值,预测结果与未消除自热影响预测出的寿命值存在较大差异,说明自热修正在寿命预测中不可忽略,否则会低估器件的工作寿命.
冯慧安霞杨东谭斐黄良喜武唯康张兴黄如
关键词:自热效应热载流子注入效应热电阻SOI
锁相环电路中压控振荡器的SET响应研究被引量:2
2011年
空间辐射环境中的锁相环在SET作用下,将产生频率或相位偏差,甚至导致振荡中止,造成通信或功能中断。压控振荡器是锁相环中的关键电路,也是对SET最为敏感的部件之一。本文基于工艺校准的器件模型,采用TCAD混合模拟的方法,针对180nm体硅CMOS工艺下高频锁相环中的压控振荡器,研究了偏置条件、入射粒子的能量以及温度对压控振荡器SET响应的影响,通过分析失效机理,以指导抗辐照压控振荡器的设计。研究结果表明,当器件工作在截止区时,入射粒子引起压控振荡器输出时钟的最大相位差最小;压控振荡器的输出时钟错误脉冲数随着入射粒子LET的增加而线性增加;随着器件工作温度的升高,轰击粒子引起压控振荡器输出时钟的最大相位差也是增大的。
秦军瑞陈吉华赵振宇梁斌刘征
关键词:压控振荡器混合模拟
Single event transient pulse attenuation effect in three-transistor inverter chain被引量:4
2012年
In this paper, compared with two-transistor (2T) inverter chain, the production and propagation of P-hit single event transient (SET) in three-transistor (3T) inverter chain is studied in depth based on three-dimensional numerical simulations in a 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. The pulse attenuation effect is found in 3T inverter chain, and the pulse can not completely propagate through the inverter chain as LET increases. The discovery will provide a new insight into SET hardened design, the 3T inverter layout structure (or similar layout structures) will be a better method in integrated circuits (ICs) design in radiation environment.
CHEN JianJunCHEN ShuMingLIANG BinLIU FanYu
Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation被引量:1
2010年
This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deepsubmicron MOSFETs. Upon the heavy ion track through the device, it can lead to displacement damage, including the vacancies and the interstitials. As the featured size of device scales down, the damage can change the dopant distribution in the channel and source/drain regions through the generation of radiation-induced defects and thus have significant impacts on their electrical characteristics. The measured results show that the radiation-induced damage can cause DC characteristics degradations including the threshold voltage, subthreshold swing, saturation drain current, transconductanee, etc. The radiation-induced displacement damage may become the dominant issue while it was the secondary concern for the traditional devices after the heavy ion irradiation. The samples are also irradiated by Co- 60 gamma ray for comparison with the heavy ion irradiation results. Corresponding explanations and analysis are discussed.
薛守斌黄如黄德涛王思浩谭斐王健安霞张兴
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