Insertion of a C-containing layer in a metal/Ge structure,using a chemical bath,enabled the Schottky barrier height(SBH) to be modulated.Chemical baths with 1-octadecene,1-hexadecene,1-tetradecene,and 1- dodecene were used separately with Ge substrates.An ultrathin C-containing layer stops the penetration of free electron wave functions from the metal to the Ge.Metal-induced gap states are alleviated and the pinned Fermi level is released.The SBH is lowered to 0.17 eV.This new formation method is much less complex than traditional ones,and the result is very good.
GaSb p-channel metal-oxide-semiconductor field-effect transistors(MOSFETs)with an atomic layer deposited Al2O3gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated.Temperature dependent electrical characteristics are investigated.Different electrical behaviors are observed in two temperature regions,and the underlying mechanisms are discussed.It is found that the reverse-bias pn junction leakage of the drain/substrate is the main component of the off-state drain leakage current,which is generation-current dominated in the low temperature regions and is diffusion-current dominated in the high temperature regions.Methods to further reduce the off-state drain leakage current are given.
Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current-voltage (I-V ) and resistance-voltage (R-V ) characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase-change line memory. The results show that the resistive amorphous (RESET) power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.
Various biaxial compressive strained GaSb p-channel metal–oxide–semiconductor field-effect transistors(MOSFETs)are experimentally and theoretically investigated. The biaxial compressive strained GaSb MOSFETs show a high peak mobility of 638 cm^2/V·s, which is 3.86 times of the extracted mobility of the fabricated GaSb MOSFETs without strain.Meanwhile, first principles calculations show that the hole effective mass of Ga Sb depends on the biaxial compressive strain.The biaxial compressive strain brings a remarkable enhancement of the hole mobility caused by a significant reduction in the hole effective mass due to the modulation of the valence bands.
