Fabricated are the double-barrier light emission tunnel junctions successfully. Introduced are the fabrication process and light emission characteristics. The spectra of the junctions are measured and analyzed especially. Their spectrum wavelength including main wave peak(locates at 450 nm^500 nm) of the double-barrier junction shows a "blue shift" in comparison with that of the single-barrier Metal/Insulator/Semiconductor(MIS) or Metal/Insulator/Metal(MIM) junction(wave peak locates at 620 nm^740 nm). This phenomenon should be due to the occurrence of the electron resonant tunneling in the double-barrier junction.
WANG Mao-xiangNIE Li-chengZHANG You-wenYU Jian-huaLIU Ke-lin
The fabrication process of Cu/Al2O3/MgF2/Au double-barrier metal/insulator/metal junction (DMIMJ) was introduced, and more stable light emission from this junction was successfully observed. The light emission physical mechanism of the junction was discussed. Results show that light emission spectrum of this structure locates at wavelength of 250-700 nm with two peaks at around 460 nm and 640 nm, which moves towards shorter wavelength region in comparison with that of the Al/Al2O3/Au junction. The light emission efficiency of this junction ranges from 0.7×10-5-2.0×10-5, which is 1 to 2 orders higher than that of the single-barrier Al/Al2O3/Au junction. The improved properties of this structure should be due to the electrons resonant tunneling effect in the double-barrier.
The Au/Al2O3/Al metal/insulator/metal junction(MIMJ) and Au/SiO2/Si metal/insulator/Si junction(MISJ) have been constructed successfully. The light emission of these junctions was mediated by surface plasmon-polaritons(SPPs) under surface roughness. The light emission from MISJ was more uniform and stable than that from MIMJ. The light power of MISJ was about 2~3 orders higher than that of MIMJ. The light emission spectrum of MISJ was analyzed especially. In the spectrum, there was one main peak located at the wavelength of 610 nm^640 nm, which was mainly due to the couple of SPP with the surface roughness at the Au/air and Au/SiO2 interfaces. A weak peak located at the shorter wavelength region in the spectrum was also found, which was caused by the direct radiation of doped-Si plasma oscillation.
WANG Mao-xiangYU Jian-huaZHANG You-wenSUN Cheng-xiuZHANG Xu-ping
