The m-plane InN （1 100） epilayers have been grown on a LiAlO2 （1 0 0） substrate by a two-step growth method using a met- al-organic chemical vapor deposition （MOCVD） system. The low temperature InN buffer layer （LT-InN） is introduced to overcome the drawbacks of thermal instability of LiAlO2 （LAO） and to relieve the strains due to a large thermal mismatch be- tween LAO and InN. Then the high temperature m-plane InN （1 1 00） epilayers （HT-InN） were grown. The results of X-ray diffraction （XRD） suggest that the m-plane InN （1 1 00） epilayer is a single crystal. The X-ray rocking curves （co scans） （XRC） and atomic force microscopy （AFM） indicate that the m-plane InN （1 1 00） epilayer has anisotropic crystallographic properties. The PL studies of the materials reveal a remarkable energy band gap structure around 0.70 eV at 15 K.
We develop a model for the effect of thermal annealing on forming In--N dusters in GalnNP according to thermodynamics. The average energy variation for forming an In--N bond in the model is estimated according to the theoretical calculation. Using the model, the added number of In--N bonds per mol of InGaNP, the added number of nearest-neighbor In atoms per N atom and the average number of nearest-neighbor In atoms per N atom after annealing are calculated. The different function of In--N clusters in InGaNP and InGaN is also discussed, which is due to the different environments around the In--N clusters.
Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer has been studied by means of photoluminescence spectroscopy and high resolution X-ray diffraction.It is found that the densities of screw and edge threading dislocations increase with the V/III ratio of the buffer layer,and the intensities of the yellow luminescence(YL) and blue luminescence(BL) emissions also increase dramatically.However,the density ratio of the edge threading dislocation to the screw threading dislocation remains invariant,as well as the intensity ratio of YL emission to BL emission.It can be concluded from these phenomena that the edge threading dislocation and screw threading dislocation can enhance the YL and BL emissions,respectively.
In this paper,we simulate a new style vertical HVPE reactor by using computational fluid dynamics program FLUENT.In order to find the best parameter on the growth rate of Gallium nitride(GaN),we change the distance between the inlet and the substrate,GaCl and NH3 inlets,and also we add substrate rotation separately.With the increase of the distance between the substrate and the gas inlet,GaN deposition rate decreases and the uniformity becomes better.The results show that the optimal distance in this new-style vertical hydride vapour phase epitaxy(HVPE) system is 4 cm.Besides,as the distance between the GaCl inlet and the NH3 inlet changes,the uniformity of GaN deposition varies.Our findings indicate that the optimal distance is 3 cm.Furthermore,it is found that substrate rotation also affects the growth rate of GaN.
We have grown transition metal （Fe, Mn） doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition. By varying the flow of the metal precursor, a series of samples with different ion con- centrations are synthesized. Microstructural properties are characterized by using a high-resolution transmission electron microscope. For Fe over-doped GaN samples, hexagonal Fe3N clusters are observed with Fe3N （0002） parallel to GaN （0002） while for Mn over-doped GaN, hexagonal Mn6N2.58 phases are observed with Mn6N2.58（0002） parallel to GaN （0002）. In addition, with higher concentration ions doping into the lattice matrix, the partial lattice orientation is distorted, leading to the tilt orGaN （0002） planes. The magnetization of the Fe over-doped GaN sam- ple is increased, which is ascribed to the participation of ferromagnetic iron and Fe3N. The Mn over-doped sample displays very weak ferromagnetic behavior, which probably originates from the Mn6N2.58.
To understand the mechanism of Gallium nitride （GaN） film growth is of great importance for their potential applications. In this paper, we investigate the growth behavior of the GaN film by combining computational fluid dynamics （CFD） and molecular dynamics （MD） simulations. Both of the simulations show that V/III mixture degree can have important impacts on the deposition behavior, and it is found that the more uniform the mixture is, the better the growth is. Besides, by using MD simulations, we illustrate the whole process of the GaN growth. Furthermore, we also find that the V/III ratio can affect the final roughness of the GaN film. When the V/III ratio is high, the surface of final GaN film is smooth. The present study provides insights into GaN growth from the macroscopic and microscopic views, which may provide some suggestions on better experimental GaN preparation.
InGaN films were deposited on（0001） sapphire substrates with GaN buffer layers under different growth temperatures by metalorganic chemical vapor deposition.The In-composition of InGaN film was approximately controlled by changing the growth temperature.The connection between the growth temperature,In content,surface morphology and defect formation was obtained by X-ray diffraction,scanning electron microscopy（SEM） and atomic force microscopy（AFM）.Meanwhile,by comparing the SEM and AFM surface morphology images,we proposed several models of three different defects and discussed the mechanism of formation.The prominent effect of higher growth temperature on the quality of the InGaN films and defect control were found by studying InGaN films at various growth temperatures.
The practical design of GaN-based Schottky barrier diodes （SBDs） incorporating a field plate （FP） structure necessitates an understanding of their working mechanism and optimization criteria. In this work, the influences of the parameters of FPs upon breakdown of the diode are investigated in detail and the design rules of FP structures for GaN-based SBDs are presented for a wide scale of material and device parameters. By comparing three representative dielectric materials （SiO2, Si3N4 and Al2O3） selected for fabricating FPs, it is found that the product of dielectric permittivity and critical field strength of a dielectric material could be used as an index to predict its potential performance for FP applications.
The influence of dry etching damage on the internal quantum efficiency of InGaN/GaN nanorod multiple quantum wells (MQWs) is studied.The samples were etched by inductively coupled plasma (ICP) etching via a selfassembled nickel nanomask,and examined by room-temperature photoluminescence measurement.The key parameters in the etching process are rf power and ICP power.The internal quantum efficiency of nanorod MQWs shows a 5.6 times decrease substantially with the rf power increasing from 3W to 100W.However,it is slightly influenced by the ICP power,which shows 30% variation over a wide ICP power range between 30W and 600W.Under the optimized etching condition,the internal quantum efficiency of nanorod MQWs can be 40% that of the as-grown MQW sample,and the external quantum efficiency of nanorod MQWs can be about 4 times that of the as-grown one.
