This paper reports that the central position of the reflected and transmitted beams of a nonlinear polarized light beam at the interface between two media undergoes transverse shifts. It presents a solution to the problem of transverse shift of a non-uniformly polarized paraxial light beam transmitting through interfaces between two homogeneous media by using a two-form amplitude and an extension matrix to represent the vector angular spectrum of a three-dimensional （3D） light beam. It derives general formula for the transverse shift of the transmitted beam, and discusses the shift of a well-collimated beam transmitting through an interface between two homogeneous media and a thin dielectric slab.
The excitonic optical absorption of GaAs bulk semiconductors under intense terahertz （THz） radiation is investigated numerically. The method of solving initial-value problems, combined with the perfect matched layer technique, is used to calculate the optical susceptibility. In the presence of a driving THz field, in addition to the usual exciton peaks, 2p replica of the dark 2p exciton and even-THz-photon-sidebands of the main exciton resonance emerge in the continuum above the band edge and below the main exciton resonance. Moreover, to understand the shift of the position of the main exciton peak under intense THz radiation, it is necessary to take into consideration both the dynamical Franz-Keldysh effect and ac Stark effect simultaneously. For moderate frequency fields, the main exciton peak decreases and broadens due to the field-induced ionization of the excitons with THz field increasing. However, for high frequency THz fields, the characteristics of the exciton recur even under very strong THz fields, which accords with the recent experimental results qualitatively.
