Both polarization gating(PG) and double optical gating(DOG) are productive methods to generate single attosecond(as) pulses. In this paper, considering the ground-state depletion effect, we investigate the wavelength-dependence of the DOG method in order to optimize the generation of single attosecond pulses for the future application. By calculating the ionization probabilities of the leading edge of the pulse at different driving laser wavelengths, we obtain the upper limit of duration for the driving laser pulse for the DOG setup. We find that the upper limit duration increases with the increase of laser wavelength. We further describe the technical method of choosing and calculating the thickness values of optical components for the DOG setup.
The ultrafast dynamics of photoexcited carriers and coherent phonons in ultrathin Bi;Te;thermoelectric films are studied through transient differential transmission spectroscopy.An ultralow frequency coherent optical phonon at 0.16 THz emerges,especially in ultrathin films,and it is ascribed to interlayer breathing modes.It can divide the ultrathin films into two groups which have outof-phase vibration along the normal of a film plane,causing a destructive interference between in-plane propagating thermal waves in the two groups of quintuple layers,and thus possibly reducing the thermal conductivity of the ultrathin films.The excitation power dependence of ultrafast dynamics reveals carrier-carrier scattering dominating thermalization,which provides a microscopic understanding of the reported high electrical conductivity and anomalously high power factor of ultrathin Bi;Te;films at room temperature.
We develop a tightly focused pump-probe absorption technique to study diffusion dynamics of photoexcited carriers.It has many advantages including the simple setup and operations,higher detection sensitivity,an analytic descriptive model and fast data samplings.Diffusion dynamics are measured twice,separately using two different-sized probe spots,instead of many time-delayed diffusion profiles of a carrier pocket measured using spatially probe-spot scanning.An analytic model is derived to describe diffusion dynamics.Diffusion dynamics in GaAs are measured to demonstrate the feasibility of this technique.The diffusion coefficient is obtained and agrees well with the reported experimental and theoretical results.
