Studies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm2 and a characteristic temperature T0 of 145 K were observed for the laser diode.
LI Deyao1, ZHANG Shuming1, WANG Jianfeng1, CHEN Jun1, CHEN Lianghui2, CHONG Ming2, ZHU Jianjun1, ZHAO Degang1, LIU Zongshun1, YANG Hui1 & LIANG Junwu1 1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
