The study of the stacking stability of bilayer MoS2 is essential since a bilayer has exhibited advantages over single layer MoS2 in many aspects for nanoelectronic applications. We explored the relative stability, optimal sliding path between different stacking orders of bilayer MoS2, and （especially） the effect of inter-layer stress, by combining first-principles density functional total energy calculations and the climbing-image nudge-elastic-band （CI-NEB） method. Among five typical stacking orders, which can be categorized into two kinds （I： AA＇, AB and II： AA＇, AB＇, A＇B）, we found that stacking orders with Mo and S superposing from both layers, such as AA＇ and AB, is more stable than the others. With smaller computational efforts than potential energy profile searching, we can study the effect of inter-layer stress on the stacking stability. Under isobaric condition, the sliding barrier increases by a few eV/（uc.GPa） from AA＇ to ABt, compared to 0.1 eV/（uc.GPa） from AB to [AB]. Moreover, we found that interlayer compressive stress can help enhance the transport properties of AA＇. This study can help understand why inter-layer stress by dielectric gating materials can be an effective means to improving MoS2 on nanoelectronic applications.
A series of FeCo-based thin films were pre- pared by magnetron sputtering without applying an induced magnetic field. The microstructure, electrical properties, magnetic properties and thermal stability of FeCo, FeCoSiN monolayer thin film and [FeCoSiN/SiNx]n multilayer thin film were investigated systematically. When FeCo thin film was doped with Si and N, the resis- tivity and soft magnetic properties of the obtained FeCo- SiN thin film can be improved effectively. The coercivity （He）, resistivity （p） and ferromagnetic resonance frequency （fr） can be further optimized for the [FeCoSiN/SiNx]n multilayer thin film. When the thickness of FeCoSiN layer and SiNx layer is maintained at 7 and 2 nm, the He, p andfr for [FeCoSiN/SiNx]n multilayer thin film are 225 A·m^-1 392 μΩ·cm^-1 and 4.29 GHz, respectively. In addition, the low coercivity of easy axis （Hoe ≈ 506 A·m^-1） of [FeCoSiN/SiNx]n multilayer thin film can be maintained after annealing at 300℃ in air for 2 h.
In this paper,we present a review of electron transport properties of magnetic granular films.Magnetic granular films are nanocomposite materials which consist of magnetic nanoparticles embedded in a nonmagnetic matrix or assembling of magnetic nanoparticles.According to the style of the nonmagnetic matrix,microstructure and the electron transport mechanism of the films,the magnetic granular films were divided into three groups:(1) magnetic metal-metal granular films,(2) magnetic metal-insulator granular films and(3) magnetic nanocluster-assembled granular films.Moreover,we also systematically review the magnetic properties,transport properties and magnetoresistance effect of size-monodispersed Co and Fe nanocluster-assembled films.
Low-toxicity single crystal Sn S nanowires had been successfully synthesized by the catalystassistant chemical vapor deposition. Au nanoparticles were applied on the ITO surface as the catalysis, using Sn S powder and S powder as forerunners. The structure, morphology and optical properties of the prepared Sn S nanowires were characterized. The experimental results show the as-synthesized nanowires are single crystalline with a preferential orientation. The synthesized Sn S nanowires show strong absorption in the visible and nearinfrared spectral region, and the direct energy band gap of Sn S nanowires is 1.46 e V.
In the present work, a series of [FesoNi20-O/SiO2]n multilayer thin films is fabricated using a reactive magnetron sputtering equipment. The thickness of SiO2 interlayer is fixed at 3 nm, while the thickness values of FesoNi20-O magnetic films range from 10 nm to 30 nm. All films present obvious in-plane uniaxial magnetic anisotropy. With increasing the FesoNi20-O layer thickness, the saturation magnetization increases slightly and the coercivity becomes larger due to the enlarged grain size, which could weaken the soft magnetic property. The results of high frequency magnetic permeability characterization show that films with thin magnetic layer are more suitable for practical applications. When the thickness of FesoNi20-O layer is 10 nm, the multilayer film exhibits the most comprehensive high-frequency magnetic property with a real permeability of 300 in gigahertz range.
