Milled form of mesophase pitch-based graphite fibers were coated with a titanium layer using chemical vapor deposition technique and Ti-coated graphite fiber/Cu composites were fabricated by hot-pressing sintering. The composites were characterized with X-ray diffraction, scanning/transmission electron microscopies, and by mea- suring thermal properties, including thermal conductivity and coefficient of thermal expansion （CTE）. The results show that the milled fibers are preferentially oriented in a plane perpendicular to the pressing direction, leading to anisotropic thermal properties of the composites. The Ti coating reacted with graphite fiber and formed a continuous and uniform TiC layer. This carbide layer establishes a good metallurgical interracial bonding in the composites, which can improve the thermal properties effectively. When the fiber content ranges from 35 vol% to 50 vol%, the in-plane thermal conductivities of the composites increase from 383 to 407 W.（m.K）-~, and the in-plane CTEs decrease from 9.5 x 10-6 to 6.3 10-6 K-1.
Herein, graphite was used in the Si-vapor reactive infiltration of diamond/SiC/Si composites to produce composites with various Si C contents. X-ray diffraction was used to determine the phases of the composite, whereas scanning electron microscopy was used to confirm the Si–C reaction between the silicon, graphite, and diamond and to observe the SiC morphology. Various SiC contents in the composite were observed with graphite addition. Furthermore, the reaction between silicon and graphite(diamond) produced coarse(fine) SiC particles. The generation of a 10-μm-diameter Si–C area on the surface of the diamond was observed. The thermal conductivity(TC) and coefficient of thermal expansion(CTE) of the composite was investigated, where the TC varied from 317–426 W·m^-1·K^-1 with the increase of the SiC volume fraction from 38% to 76% and the corresponding CTE increased from 1.7 × 10^-6 to 3.7 × 10^-6 K^-1, respectively. Furthermore, a critical point for the CTE was found to exist at approximately 250℃, where the composite was under a hydrostatic condition. Finally, the bending strength was found to range from 241 to 341 MPa.
This study was pertained to the effects of Ti coating on diamond surfaces and Si addition into Al matrix on the thermal conductivity（TC） and the coefficient of thermal expansion（CTE） of diamond/Al composites by pressure infiltration.The fracture surfaces,interface microstructures by metal electro-etching and interfacial thermal conductance of the composites prepared by two methods were compared.The results reveal that Ti coating on diamond surfaces and only12.2 wt% Si addition into Al matrix could both improve the interfacial bonding and increase the TCs of the composites.But the Ti coating layer introduces more interfacial thermal barrier at the diamond/Al interface compared to adding 12.2 wt% Si into Al matrix.The diamond/Al composite with 12.2 wt% Si addition exhibits maximum TC of 534 W·m^-1·K^-1and a very low CTE of 8.9×10^-6K^-1,while the coating Ti-diamond/Al composite has a TC of 514 W·m^-1·K^-1 and a CTE of 11.0×10^-6K^-1.
To inhibit the graphitization of diamond under high temperature and low pressure, diamond/SiC composites were firstly fabricated by a rapid gaseous Si vacuum reactive infiltration process. The microstructure and graphitization behavior of diamond in the composites under various infiltration temperatures and holding time were investigated. The thermal conductivity of the resul- tant materials was discussed. The results show that the diamond-to-graphite transition is effectively inhibited at temperature of as high as 1600 ℃ under vacuum, and the substantial graphitization starts at 1700 ℃. The microstructure of those ungraphitized samples is uniform and fully densified. The inhibition mechanisms of graphitization include the isolation of the catalysts from diamond by a series of protective layers, high pressure stress applied on diamond by the reaction-bonded SiC, and the moderate gas-solid reaction. For the graphitized samples, the boundary between diamond and SiC is coarse and loose. The graphitization mechanism is considered to be an initial detachment of the bilayers from the diamond surfaces, and subsequently flattening to form graphite. The ungraphitized samples present higher thermal conductivity of about 410 W.m-1.K-1 due to the fine interfacial structure. For the graphitized samples, the thermal conductivity decreases significantly to 285 W.m-1.K-1 as a result of high interfacial thermal resistance.
Zhen-Liang YangLi-Gen WangLi-Min WangXin-Bo HeXuan-Hui QuRong-Jun LiuHai-Feng Hu
