The defects of an OLED-based display,mainly electrical shorts,cause pixels to stay dark,decrease the brightness of a panel,severely influence the display uniformity,and also consume a considerable amount of power. In this paper, for AM-OLEDs, a novel circuit employing p-type low-temperature poly-Si thin-film transistors is introduced to offer fault-tolerant capabilities for such defects. The results show that this circuit can save significant power and maintain the luminance of the pixel without changing the driving current.
阻变式存储器(resistive random access memory,RRAM)是以材料的电阻在外加电场作用下可在高阻态和低阻态之间实现可逆转换为基础的一类前瞻性下一代非挥发存储器.它具有在32nm节点及以下取代现有主流Flash存储器的潜力,成为目前新型存储器的一个重要研究方向.但阻变式存储器的电阴转变机理不明确,制约它的进一步研发与应用.文章对阻变式存储器的体材料中几种基本电荷输运机制进行了归纳,总结了目前对阻变式存储器存储机理的理论模型.
