Graphene on dielectric substrates is essential for its electronic applications. Graphene is typically synthesized on the surface of metal and then transferred to an appropriate substrate for fabricating device applications. This post growth transfer process is detrimental to the quality and performance of the as-grown graphene. Therefore, direct growth of graphene films on dielectric substrates without any transfer process is highly desirable. However, fast growth of graphene on dielectric substrates remains challenging. Here, we demonstrate a transfer-free chemical vapor deposition (CVD) method to directly grow graphene films on dielectric substrates at fast growth rate using Cu as floating catalyst. A large area (centimeter level) graphene can be grown within 15 min using this CVD method, which is increased by 500 times compared to other direct CVD growth on dielectric substrate in the literatures. This research presents a significant progress in transfer-free growth of graphene and graphene device applications.
CdS sensitized NiO electrode was used as the photoactive cathode in a photoelectrochemical cell for water splitting,avoiding the use of a sacrificial electron donor.Photocurrent increment under visible light irradiation was observed after integration of[Co（dmgH）_2（4-Me-py）Cl]（1） to the photocathode,suggesting 1 could accept electrons from photoexcited CdS for water reduction and NiO could move the holes in the valence band of CdS to anode for water oxidation.
Yong NaBo HuQiu-Ling YangJian LiuLi ZhouRui-Qing FanYu-Lin Yang
Since silicon is limited by its physical properties,it is challenging and important to find candidate materials for high performance electronic devices.Two-dimensional（2D）semiconductor materials have attracted dramatically increasing interest due to their unique physical,
The piezoelectric properties of K1-xNaxNbO3 are studied by using first-principles calculations within virtual crystal approximation. To understand the critical factors for the high piezoelectric response in K1-xNaxNbO3, the total energy, piezoelectric coefficient, elastic property, density of state, Born effective charge, and energy barrier on polarization rotation paths are systematically investigated. The morphotropic phase boundary in K1-xNaxNbO3 is predicted to occur at x = 0.521, which is in good agreement with the available experimental data. At the morphotropic phase boundary, the longitudinal piezoelectric coefficient d33 of orthorhombic K0.5Na0.5NbO3 reaches a maximum value. The rotated maximum of d＊33 is found to be along the 50° direction away from the spontaneous polarization （close to the [001] direction）. The moderate bulk and shear modulus are conducive to improving the piezoelectric response. By analyzing the energy barrier on polarization rotation paths, it is found that the polarization rotation of orthorhombic K0.5Na0.5NbO3 becomes easier compared with orthorhombic KNbO3, which proves that the high piezoelectric response is attributed to the flattening of the free energy at compositions close to the morphotropic phase boundary.
A pyridine-anchor co-adsorbent of N,N＇-bis（（pyridin-2-yl）（methyl） methylene）-o-phenylenediamine（named BPPI） is prepared and employed as co-adsorbent in dye-sensitized solar cells（DSSCs）. The prepared co-adsorbent could overcome the deficiency of N719 absorption in the low wavelength region of visible spectrum, offset competitive visible light absorption of I_3^-, enhance the spectral responses of the co-adsorbed TiO_2 film in region from 300 nm to 750 nm, suppress charge recombination, prolong electron lifetime, and decrease the total resistance of DSSCs. The optimized cell device co-sensitized by BPPI/N719 dye gives a short circuit current density of 12.98 m A cm^（-2）, an open circuit voltage of 0.73 V,and a fill factor of 0.66 corresponding to an overall conversion efficiency of 6.22% under standard global AM 1.5 solar irradiation, which is much higher than that of device solely sensitized by N719（5.29%）under the same conditions. Mechanistic investigations are carried out by various spectral and electrochemical characterizations.
Yang XuLiang-Sheng QiangYu-Lin YangLi-Guo WeiPing WangRui-Qing Fan
