Antimony ions were implanted into ZnMnO films grown on silicon (Si) by radiofrequencymagnetron sputtering. The implanted samples were treated by rapid thermal annealingand investigated by X-ray photoelectron spectroscopy, X-ray diffraction and Raman scattering. Inthe wurtzite of ZnMnO, both manganese (Mn) and stibium (Sb) substituted the lattice position ofzinc (Zn). The ZnMnO films were characterized by Raman scattering at 522 cm^(-1), attributed toa local vibration of Mn. After implantation with Sb ions, two new peaks 681 cm^(-1) and 823 cm^(-1)were observed in the ZnMnO films, as a result of ion-induced damage to the lattice.
A home-made electron source assisted medium-frequency (MF) magnetron sputteringsystem was used to deposit thick CrN films on silicon and tungsten carbide substrates atvarious nitrogen flow rates with a fixed total pressure (0.3 Pa) and MF power (11.2 kW). Resultfrom scanning electron microscopy showed that the deposited CrN films have clear columnar structure,and X-ray diffraction revealed a preferred orientation of CrN (200) for samples prepared ata rate of N_2/(N_2+Ar) below 60%, whereas those prepared at higher N_2/(N_2+Ar) rate are dominatedby Cr_2N. Deposition rates up to 12.5μm/h were achieved and the hardness of the CrNcoatings were in a range of 11 GPa to 18 GPa.
