We report on a micro-Raman investigation of inducing defects in mono-layer,bi-layer and tri-layer graphene by γ ray radiation.It is found that the radiation exposure results in two-dimensional (2D) and G band position evolution with the layer number increasing and D and D bands rising,suggesting the presence of defects and related crystal lattice deformation in graphene.Bi-layer graphene is more stable than mono-and tri-layer graphene,indicating that the former is a better candidate in the application of radiation environments.Also,the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density.
Among the many possible device configurations for organic memory devices,organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight,low-cost,flexible charge storage media.In this feature article,the recent progress in the classes of OFET-based memory,including floating gate OFET memory,polymer electret OFET memory,ferroelectric OFET memory and several other kinds of OFET memories with unique configurations,are introduced.Finally,the prospects and problems of OFETs memory are discussed.
WANG HongPENG YingQuanJI ZhuoYuLIU MingSHANG LiWeiLIU XingHua
