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国家重点基础研究发展计划(2011CB808404)

作品数:2 被引量:1H指数:1
发文基金:国家自然科学基金国家重点基础研究发展计划更多>>
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Nonvolatile memory devices based on organic field-effect transistors被引量:1
2011年
Among the many possible device configurations for organic memory devices,organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight,low-cost,flexible charge storage media.In this feature article,the recent progress in the classes of OFET-based memory,including floating gate OFET memory,polymer electret OFET memory,ferroelectric OFET memory and several other kinds of OFET memories with unique configurations,are introduced.Finally,the prospects and problems of OFETs memory are discussed.
WANG HongPENG YingQuanJI ZhuoYuLIU MingSHANG LiWeiLIU XingHua
关键词:有机场效应晶体管非易失性存储器内存记忆体重量轻
Advancements in organic nonvolatile memory devices
2011年
As one of the most promising candidates for next generation storage media, organic memory devices have aroused worldwide research interest in both academia and industry. In recent years, organic memories have experienced rapid progress. We review the development of organic resistive switching memories in terms of structure, characteristics, materials used, and integration. Some basic concepts are discussed, as well as the obstacles hindering the development and possible commercialization of organic memory devices.
LIU XinJI ZhuoYuLIU MingSHANG LiWeiLI DongMeiDAI YueHua
关键词:非易失性存储器记忆体候选人工业界学术界
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