The flow and heat transfer of molten GaAs during Czochralski growth are studied with a time-dependent and three-dimensional turbulent flow model. A transition from axisymmetric flow to non-axisymmetric flow and then back to axisymmetric flow again with increasing the crucible rotation rate is predicted. In the non-axisymmetric regime, the thermal wave induced by the combination of coriolis force, buoyancy and viscous force in the GaAs melt is predicted for the first time. The thermal wave is confirmed to be baroclinic thermal wave. The origin of the transition to non-axisymmetric flow is baroclinic instability. The critical parameters for the transitions are presented, which are quantitatively in agreement with Fein and Preffer’s experimental results. The calculated results can be taken as a reference for the growth of GaAs single-crystal of high quality.
用原子力显微镜(atomic force microscopy,AFM)对凝胶法生长的KClO4晶体的最重要面{001}面微观形貌进行了研究。结果表明,在不同的过饱和度下,KClO4晶体分别表现为二维成核生长、三维成核生长、层核生长以及多层堆垛生长等生长机理。从热力学角度解释了过饱和度对KClO4晶体生长机理的影响。对二维成核生长机理,揭示了KClO4晶体生长中二维核的形状和取向,及生长台阶的取向。研究结果还表明,杂质的存在将阻止台阶的向前推进,并导致聚并台阶及弯曲台阶的形成。
