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国家自然科学基金(61006008)

作品数:3 被引量:4H指数:1
相关作者:刘思成贾仁需汤晓燕更多>>
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4H-SiC同质外延生长Grove模型研究被引量:2
2014年
本文通过对4H-SiC同质外延化学反应和生长条件的分析,建立了4H-SiC同质外延生长的Grove模型,并结合实验结果进行了分析和验证.通过理论分析和实验验证,得到了外延中氢气载气流量和生长温度对4H-SiC同质外延生长速率的影响.研究表明:外延生长速率在衬底直径上为碗型分布,中心的生长速率略低于边缘的生长速率;随着载气流量的增大,生长速率由输运控制转变为反应速率控制,生长速率先增大而后逐渐降低;载气流量的增加,会使高温区会发生漂移,生长速率的理论值和实验出现一定的偏移;随着外延生长温度的升高,化学反应速率和气相转移系数都会增大,提高了外延速率;温度对外延反应速率的影响远大于对生长质量输运的影响,当温度过分升高后,外延生长会进入质量控制区;但过高的生长温度导致源气体在生长区边缘发生反应,生成固体粒子,使实际参与外延生长的粒子数减少,降低了生长速率,且固体粒子会有一定的概率落在外延层上,严重影响外延层的质量.通过调节氢气流量,衬底旋转速度和生长温度,可以有效的控制外延的生长速度和厚度的均匀性.
贾仁需刘思成许翰迪陈峥涛汤晓燕杨霏钮应喜
关键词:生长速率
Reduction of Deep Level Defects in Unintentionally Doped 4H-SiC Homo-epilayers by Ion Implantation被引量:1
2012年
In order to reduce deep level defects, the theory and process design of 4H-SiC homoepitaxial layer implanted by carbon ion are studied. With the Monte Carlo simulator TRIM, the ion implantation range, location of peak concentration and longitudinal straggling of carbon are calculated. The process for improving deep energy level in undoped 4H-SiC homoepitaxial layer by three times carbon ion-implantation is proposed, including implantation energy, dose, the SiO2 resist mask, annealing temperature, annealing time and annealing protection. The deep energy level in 4H-SiC material can be significantly improved by implantation of carbon atoms into a shallow surface layer. The damage of crystal lattice can be repaired well, and the carbon ions are effectively activated after 1 600 ℃ annealing, meanwhile, deep level defects are decreased.
贾仁需张玉明
Atomic layer deposited high-k Hf_xAl_(1-x)O as an alternative gate dielectric for 4H-SiC MIS based transistors被引量:1
2012年
HfxAl(1-x)O film grown by atomic layer deposition(ALD) on n-type 4H-SiC(0001) epitaxial layer has been studied.Measurements show that it has relatively high breakdown electric field of 16.4 MV/cm,high dielectric constant of 16.3 and low gate leakage current of 2.47×10-5 A/cm2 at E=5 MV/cm,which makes ALD HfxAl(1-x)O a great potential candidate gate dielectric for 4H-SiC MIS based transistors.
SONG QingWenZHANG YuMingZHANG YiMenTANG XiaoYanJIA RenXu
关键词:4H-SICMIS
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