This paper reports a new material, indium-doped ZnS (ZnS:In) film, which is fabricated for the first time to improve its electrical and optical performance. By electron beam evaporation technology and the optimized annealing treatment, high quality ZnS:In film is prepared. XRD indicates that the incorporation of 6 at.% indium atoms into ZnS film causes little lattice deformation.The AFM results imply that largesized particles are compactly dispersed in the ZnS:In layer and results in an unsmooth surface. Electrical and optical property tests show that the resistivity of ZnS film is greatly decreased to 4.46×10^(-2) cm and the optical transmittance is improved to 85% in the visible region. Comparing with the results in other literatures, significant progress in electrical/optical performance has been made in this paper.
The p-NiO thin film is prepared by radio frequency magnetron sputtering on the n-GaN/sapphire substrate to form p-NiO/n-GaN heterojunction diodes.The structural,optical and electrical properties of the p-NiO thin film are investigated.The results indicate that the NiO film has good crystal qualities and stable p-type conductivities.The current-voltage measurement of the p-NiO/n-GaN diode exhibits typical rectifying behaviour with a turn-on voltage of about 2.2 V.Under forward bias,a prominent ultraviolet emission centered at 375 nm is observed at room temperature.Furthermore,the mechanism of the light emission is discussed in terms of the band diagrams of the heterojunction in detail.
