A series of Co-doped EuFe2-xCoxAs2 compounds were prepared in both of single crystalline and polycrystalline forms.The Co-doping effects on the crystal structure,electrical resistivity and magnetic susceptibility were systematically studied.Superconductivity was found in polycrystalline Co-doped samples from zero resistivity effects,with the highest onset superconducting transition temperature at 26 K in the optimum doped EuFe1.84Co0.16As2 compound.While due to the stronger competition between the superconducting order and the Eu2+ magnetic order,the zero resistivity effect is absent in the Co-doped single crystal samples.
We report that fully transparent resistive random access memory(TRRAM) devices based on ITO/TiO2/ITO sandwich structure,which are prepared by the method of RF magnetron sputtering,exhibit excellent switching stability.In the visible region(400-800 nm in wavelength) the TRRAM device has a transmittance of more than 80%.The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage,while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability.The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO 2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.
