This article deals with the strain distributions around GaN/AlN quantum dots by using the finite element method. Special attention is paid to the influence of Al0.2Ga0.8N strain-reducing layer on strain distribution and electronic structure. The numerical results show that the horizontal and the vertical strain components are reinforced in the GaN quantum dot due to the presence of the strain-reducing layer, but the hydrostatic strain in the quantum dot is not influenced. According to the deformation potential theory, we study the band edge modifications and the piezoelectric effects. The result demonstrates that with the increase of the strain reducing layer, the transition energy between the ground state electron and the heavy hole increases. This result is consistent with the emission wavelength blue shift phenomenon observed in the experiment and confirms that the wavelength shifts toward the short wavelength range is realizable by adjusting the structure-dependent parameters of GaN/AlN quantum dot.
Using the finite element method,this paper investigates lateral stress-induced propagation characteristics in a photonic crystal fibre of hexagonal symmetry.The results of simulation show the strong stress dependence of effective index of the fundamental guided mode,phase modal birefringence and confinement loss.It also finds that the contribution of the geometrical effect that is related only to deformation of the photonic crystal fibre and the stress-related contribution to phase modal birefringence and confinement loss are entirely different.Furthermore,polarization-dependent stress sensitivity of confinement loss is proposed in this paper.
The band structures of rectangular GaN/AlGaN quantum wires are modeled by using a parabolic effective-mass theory.The absorption coefficients are calculated in a contact-density matrix approach based on the band structure.The results obtained indicate that the peak absorption coefficients augment with the increase of the injected carrier density,and the optical gain caused by interband transition is polarization anisotropic.For the photon energy near 1.55 eV,we can obtain relatively large peak gain.The calculations support the previous results published in the recent literature.
This paper presents a finite element method of calculating strain distributions in and around the self-organized GaN/AlN hexagonal quantum dots.The model is based on the continuum elastic theory,which is capable of treating a quantum dot with an arbitrary shape.A truncated hexagonal pyramid shaped quantum dot is adopted in this paper.The electronic energy levels of the GaN/AlN system are calculated by solving a three-dimension effective mass Shro¨dinger equation including a strain modified confinement potential and polarization effects.The calculations support the previous results published in the literature.
