We report the recent result of GaAs/GaInP dual-junction solar cells grown by all solid-state molecularbeamepitaxy(MBE).The device structure consists of a GaIn0.48P homojunction grown epitaxially upon a GaAs homojunction,with an interconnected GaAs tunnel junction.A photovoltaic conversion efficiency of 27% under the AM1.5 globe light intensity is realized for a GaAs/GaInP dual-junction solar cell,while the efficiencies of 26% and 16.6% are reached for a GaAs bottom cell and a GaInP top cell,respectively.The energy loss mechanism of our GaAs/GaInP tandem dual-junction solar cells is discussed.It is demonstrated that the MBE-grown phosphide-containing Ⅲ–V compound semiconductor solar cell is very promising for achieving high energy conversion efficiency.
