There is a great interest in monolithic 4H-Si C Junction Barrier Schottky(JBS) diodes with the capability of a high forward current for industrial power applications.In this paper,we report large-area monolithic 4H-Si C JBS diodes fabricated on a 10 μm 4H-Si C epitaxial layer doped to 6×1015 cm3.JBS diodes with an active area of 30 mm2 had a forward current of up to 330 A at a forward voltage of 5 V,which corresponds to a current density of 1100 A/cm2.A near ideal breakdown voltage of 1.6 k V was also achieved for a reverse current of up to 100 A through the use of an optimum multiple floating guard rings(MFGR) termination,which is about 87.2% of the theoretical value.The differential specific-on resistance(RSP-ON) was measured to be 3.3 m cm2,leading to a FOM(VB2/RSP-ON) value of 0.78 GW/cm2,which is very close to the theoretical limit of the tradeoff between the specific-on resistance and breakdown voltage for 4H-Si C unipolar devices.
In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power Schottky barrier diodes （SBDs） are fabricated with three N-type drift layer thickness values of 10 μm, 30μm, and 50 μm, respectively. The avalanche breakdown capabilities, static and transient characteristics of the fabricated devices are measured in detail and compared with the theoretical pre- dictions. It is found that the experimental results match well with the theoretical calculation results and are very close to the 4H-SiC theoretical limit line. The best achieved breakdown voltages （BVs） of the diodes on the 10 p.m, 30 m, and 50 -tm epilayers are 1400 V, 3320 V, and 5200 V, respectively. Differential specific-on resistances （Ron-sp） are 2.1 m--cm2, 7.34 mO. cm2, and 30.3 m-. cm2, respectively.
The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors（UMOSFETs） is reported in this paper.The device has a 15-μm thick drift layer with 3×10^15 cm^-3 N-type doping concentration and a 3.1μm channel length.The measured on-state source-drain current density is 65.4 A/cm^2 at Vg = 40 V and VDS = 15 V.The measured threshold voltage（Vth） is 5.5 V by linear extrapolation from the transfer characteristics.A specific on-resistance（Rsp-on） is 181 mΩ·cm^2 at Vg = 40 V and a blocking voltage（BV） is 880 V（IDS = 100 μA@880V） at Vg = 0 V.
