Nanocrystalline diamond (NCD) film deposition on pure titanium and Ti alloys is extraordinarily difficult because of the high diffusion coefficient of carbon in Ti, the large mismatch in their thermal expansion coefficients, the complex nature of the interlayer formed during diamond deposition, and the difficulty to achieve very high nucleation density. In this investigation, NCD films were successfully deposited on pure Ti substrate by using a novel substrate pretreatment of ultrasonic scratching in a diamond powder-ethanol suspension and by a two-step process at moderate temperature. It was shown that by scratching with a 30-μm diamond suspension for 1 h, followed by a 10-h diamond deposition, a continuous NCD film was obtained with an average grain size of about 200 nm. Detailed experimental results on the preparation, characterization, and successful deposition of the NCD films on Ti were discussed.
Erosion test of some infrared (IR) optical crystals (Ge, ZnS, MgF2, and quartz) was conducted with a number of different erodents (glass bead, and angular SiC, SiO2, Al2O3) by a homemade gas-blasting erosion tester. The influence of impact angle, impact velocity, erodent, and erosion time on the erosion rate and the effect of erosion on their IR transmittance were studied. The dam- aged surface morphology was characterized by scanning electron microscopy, and the erosion mechanism was explored. All of the materials show the maximum in wear versus impact angle at 90°, confirming their brittle failure behavior. It is found that the erosion rate is dependent on the erodent velocity by a power law, and it is highly correlated to the hardness of the erodent. The erosion rate-time curves do not show an incubation state, but an accelerated erosion period followed a maximum erosion (steady state). The decrease of IR transmittance is direct proportion to the erosion rate. Although the material loss occurs primarily by brittle process, ductile behavior is clearly an important feature, especially for MgF2 and ZnS.
Qi He Fanxiu Lv Fenglei Zhang Huibin Guo Junjun Wei