Hydrogenated microcrystalline silicon (μcSi:H) thin films were deposited by an radio frequency (RF)(13.56 MHz) magnetron sputtering at different substrate temperatures (100–300℃), and the influences of substrate temperature on the growth and properties ofμc-Si:H thin films were investigated. Surface roughness and crystallinity of the thin films increase as substrate temperature increases. And all thin films are at the transition region(X_(c)=49.2%~61.0%). Theμc-Si:H thin films deposited at lower substrate temperature (≤200℃) represent a weak(220) preferred orientation, while the thin films deposited at higher substrate temperature (≥250℃) exhibit a weak(111) preferred orientation. The μc-Si:H thin films have a dense structure, and the structural compactness of the thin films slightly increases with substrate temperature increasing. The Fourier transform infrared spectroscopy (FTIR) results indicate that theμc-Si:H thin films have a low hydrogen content (3.9 at%–5.6 at%), which is in favor of reducing light-induced degradation effect.
