We investigate the thermal stability of HfTaON films prepared by physical vapor deposition using high resolution transmission electronic microscope (HRTEM) and X-ray photoelectron spectroscopy (XPS). The results indicate that the magnetron-sputtered HfTaON films on Si substrate are not stable during the post-deposition an- nealing (PDA). HfTaON will react with Si and form the interfacial layer at the interface between HfTaON and Si substrate. Hf–N bonds are not stale at high temperature and easily replaced by oxygen,resulting in significant loss of nitrogen from the bulk film. SiO2 buffer layer introduction at the interface of HfTaON and Si substrate may effec- tively suppress their reaction and control the formation of thicker interfacial layer. But SiO2 is a low k gate dielectric and too thicker SiO2 buffer layer will increase the gate dielectric’s equivalent oxide thickness. SiON prepared by oxidation of N-implanted Si substrate has thinner physical thickness than SiO2 and is helpful to reduce the gate dielectric’s equivalent oxide thickness.
Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated.Both HF/HN O 3 /H 2 O and NH 4 OH/H 2 O 2 solutions can etch TaN effectively,but poor selectivity to the gate dielectric for the HF/HNO 3 /H 2 O solution due to HF being included in HF/HNO 3 /H 2 O,and the fact that TaN is difficult to etch in the NH 4 OH/H 2 O 2 solution at the first stage due to the thin TaO x N y layer on the TaN surface,mean that they are difficult to individually apply to dual-metal-gate integration.A two-step wet etching strategy using the HF/HNO 3 /H 2 O solu-tion first and the NH 4 OH/H 2 O 2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath.High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and J g-V g characteristics,which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.
A novel dry etching process of a poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor（CMOS） devices is investigated.Our strategy to process a poly-Si/TaN/HfSiON gate stack is that each layer of gate stack is selectively etched with a vertical profile.First,a three-step plasma etching process is developed to get a vertical poly-Si profile and a reliable etch-stop on a TaN metal gate.Then different BCl3-based plasmas are applied to etch the TaN metal gate and find that BCl3/Cl2/O2/Ar plasma is a suitable choice to get a vertical TaN profile.Moreover,considering that Cl2 almost has no selectivity to Si substrate, BCl3/Ar plasma is applied to etch HfSiON dielectric to improve the selectivity to Si substrate after the TaN metal gate is vertically etched off by the optimized BCl3/Cl2/O2/Ar plasma.Finally,we have succeeded in etching a poly-Si/TaN/HfSiON stack with a vertical profile and almost no Si loss utilizing these new etching technologies.
This paper presents a method using simple physical vapour deposition to form high-quality hafnium silicon oxyni- tride (HfSiON) on ultrathin SiO 2 buffer layer. The gate dielectric with 10 A (1 A = 0.1 nm) equivalent oxide thickness is obtained. The experimental results indicate that the prepared HfSiON gate dielectric exhibits good physical and electrical characteristics, including very good thermal stability up to 1000 C, excellent interface properties, high dielectric constant (k = 14) and low gate-leakage current (I g = 1.9 × 10 3 A/cm 2 @V g = V fb 1 V for EOT of 10 A). TaN metal gate electrode is integrated with the HfSiON gate dielectric.The effective work function of TaN on HfSiON is 4.3 eV, meeting the requirements of NMOS for the metal gate. And, the impacts of sputtering ambient and annealing temperature on the electrical properties of HfSiON gate dielectric are investigated.
The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated.HF-based solutions are the most promising wet chemistries for the removal of HfSiON,and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution.Due to densification during annealing, the etch rate of HfSiON annealed at 900℃for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions.After the HfSiON film has been completely removed by HF-based solutions,it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature,since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions.Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering.In addition,we show that N_2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.
The appropriate wet etch process for the selective removal of TaN on the HfSiON dielectric with an amorphous-silicon(a-Si) hardmask is presented.SCI(NH_4OH:H_2O_2:H_2O),which can achieve reasonable etch rates for metal gates and very high selectivity to high-k dielectrics and hardmask materials,is chosen as the TaN etchant. Compared with the photoresist mask and the tetraethyl orthosilicate(TEOS) hardmask,the a-Si hardmask is a better choice to achieve selective removal of TaN on the HfSiON dielectric because it is impervious to the SC1 etchant and can be readily etched with NH_4OH solution without attacking the TaN and the HfSiON film.In addition,the surface of the HfSiON dielectric is smooth after the wet etching of the TaN metal gate and a-Si hardmask removal,which could prevent device performance degradation.Therefore,the wet etching of TaN with the a-Si hardmask can be applied to dual metal gate integration for the selective removal of the first TaN metal gate deposition.
