Electrical transport and thermoelectric properties of Ni-doped YCOl-xNixO3 （0 ≤ x ≤0.07）, prepared by using the sol-gel process, are investigated in a temperature range from 100 to 780 K. The results show that with the increase of Ni doping content, the values of DC resistivity of YCo 1-xNixO3 decrease, but carder concentration increases. The temperature dependences of the resistivity for YCOl-xNixO3 are found to follow a relation of lnp o, lIT in a low-temperature range （LTR） （T 〈- 304 K for x = 0; - 230 K 〈 T 〈- 500 K for x = 0.02, 0.05, and 0.07） and high-temperature range （HTR） （T 〉-655 K for all compounds）, respectively. The estimated apparent activation energies for conduction Eal in LRT and Ea2 in HTR are both found to decrease monotonically with doping content increasing. At very low temperatures （T 〈-230 K）, Mott＇s law is observed for YCOl-xNixO3 （x≥ 0.02）, indicating that considerable localized states form in the heavy doping compounds. Although the Seebeck coefficient of the compound decreases after Ni doping, the power factor of YCOl-xNixO3 is enhanced remarkably in a temperature range from 300 to 740 K, i.e., a 6-fold increase is achieved at 500 K for YCo0.98Ni0.0203, indicating that the high-temperature thermoelectric property of YCoO3 can be improved by partial substitution of Ni for Co.
