We report on a micro-Raman investigation of inducing defects in mono-layer,bi-layer and tri-layer graphene by γ ray radiation.It is found that the radiation exposure results in two-dimensional (2D) and G band position evolution with the layer number increasing and D and D bands rising,suggesting the presence of defects and related crystal lattice deformation in graphene.Bi-layer graphene is more stable than mono-and tri-layer graphene,indicating that the former is a better candidate in the application of radiation environments.Also,the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density.
This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho-tolithographic process.The semiconductor layer is protected by a passivation layer.Through photolithographic and etching processes,parts of the passivation layer are etched off to form source/drain electrode patterns.Combined with conventional evaporation and lift-off techniques,organic field effect transistors with a top contact are fabricated suc-cessfully,whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process.
