N-ion-implantation to a fluence of 1 × 1015 ions/cm^2 was performed on ZnS thin films deposited on glass substrates by using the vacuum evaporation method. The films were annealed in flowing nitrogen at 400 ℃-500 ℃ after N-ion-implantation to repair the ion-beam-induced structural destruction and electrically activate the dopants. Effects of ion-implantation and post-thermal annealing on ZnS films were investigated by X-ray diffraction （XRD）, photoluminescence （PL）, optical transmittance, and electrical measurements. Results showed that the diffraction peaks and PL intensities were decreased by N-ion-implantation, but fully recovered by further annealing at 500 ℃. In this experiment, all films exhibited high resistivity due to the partial dopant activation under 500 ℃.
We investigate the dynamic responses of the series parallel-plate mesoscopic capacitors to a time-dependent external voltage. The results indicate that the quantum coherence between two capacitors strongly depends on the frequency of the external voltage and the distance between the two capacitors （c-c distance）. The behaviors of the series capacitance incompletely follow the Kirchhoff＇s laws; only in the low frequency case or the limit of the c-c distance, the capacitance approaches to the classical series capacitance. In addition, the real part of the frequency-dependent capacitance shows a maximum and a minimum, which appear around the peak of the imaginary part. These phenomena may be associated with the plasmon excitation in the mesoscopic capacitors.
