The growth of γ-In_(2)Se_(3) thin films on mica by molecular beam epitaxy is studied. Single-crystalline γ-In_(2)Se_(3) is achieved at a relatively low growth temperature. An ultrathin β-In_(2)Se_(3) buffer layer is observed to nucleate and grow through a process of self-organization at initial deposition, which facilitates subsequent monolithic epitaxy of single-crystallineγ-In_(2)Se_(3) at low temperature. Strong room-temperature photoluminescence and moderate optoelectronic response are observed in the achieved γ-In_(2)Se_(3) thin films.
