Magnetic tunnel junctions(MTJs) based on MgO barrier have been fabricated by sputtering single crystal MgO target and metal Mg target, respectively, using magnetic sputtering system Nordiko 2000. MgO barriers have been formed by a multi-step deposition and natural oxidization of Mg layer. Mg layer thickness,oxygen flow rate and oxidization time were adjusted and the tunnel magnetoresistance(TMR) ratio of optimal MTJs is over 60% at annealing temperature 385. The(001) MgO crystal structure was obtained when the separation distance between MgO target and substrate is less than 6 cm. The TMR ratio of most MgO based MTJs are over 100% at the separation distance of 5 cm and annealing temperature 340. The TMR ratios of MTJs are almost zero when the separation distance ranges from 6 to 10 cm, due to the amorphous nature of the MgO film.
ZnO thin film was fabricated on tin-doped indium oxide electrode as an electron selective layer of inverted polymer solar cells using magnetron sputtering deposition. Ionic liquid-functionalized carbon nanoparticles(ILCNs) film was further deposited onto ZnO surfaces by drop-casting ILCNs solution to improve interface properties. The power conversion efficiency(PCE) of inverted polymer solar cells(PSCs)with only ZnO layer was quickly decreased from 2.7% to 2.2% when the thickness of ZnO layer was increased from 15 nm to 60 nm. However, the average PCE of inverted PSCs with ZnO layer modified with ILCNs only decreased from 3.5% to 3.4%, which is comparable to that of traditional PSCs with poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) anode buffer layer. The results suggested that the contact barrier between ZnO layer and poly(3-hexylthiophene) and phenyl-C61-butyric acid methylester(P3HT:PCBM)blended film compared to ZnO bulk resistance can more significantly influence the performance of inverted PSCs with sputtered ZnO layer. The vanishment of negative capacitive behavior of inverted PSCs with ILCNs modified ZnO layer indicated ILCNs can greatly decrease the contact barrier of ZnO/P3HT:PCBM interface.
Feng ZhuXiaohong ChenZhe LuJiaxiang YangSumei HuangZhuo Sun
