Ⅲ-V族化合物GaInP是一种高效发光材料.金属有机化学气相沉积(Metal Organic Chemical Vapor Deposition,MOCVD)技术能均匀生长多结、多层和大面积的薄膜材料,是一种非常有效的方法.通过分别运用计算流体力学、动力学蒙特卡罗方法与虚拟现实技术相结合,提出了一个研究垂直MOCVD反应器的GaInP薄膜生长过程的流体动力学、热力学和分子动力学多尺度模拟方法.可视化结果不仅准确和直观的显示了MOCVD反应器里的气体热流场分布情况,而且展示了MOCVD反应器中的GaInP薄膜生长过程.因此,该模拟为我们优化GaInP的MOCVD生长提供了一个重要指导.
As a Group III–V compound, GaInP is a high-efficiency luminous material. Metal organic chemical vapor deposition (MOCVD) technology is a very efficient way to uniformly grow multi-chip, multilayer and large-area thin film. By combining the computational fluid dynamics (CFD) and the kinetic Monte Carlo (KMC) methods with virtual reality (VR) technology, this paper presents a multiscale simulation of fluid dynamics, thermodynamics, and molecular dynamics to study the growth process of GaInP thin film in a vertical MOCVD reactor. The results of visualization truly and intuitively not only display the distributional properties of the gas’ thermal and flow fields in a MOCVD reactor but also display the process of GaInP thin film growth in a MOCVD reactor. The simulation thus provides us with a fundamental guideline for optimizing GaInP MOCVD growth.
