The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy (MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum well (QW). The 1.3-μm GaAs based metamorphic InGaAs QW is completed. A 1.3-μm GaAs based metamorphic laser is reported.
