Tio2(001) surface of rutile TiO2 single crystals was studied by surface photovoltage spectrum (SPS) and electrical field-induced surface photovoltage spectrum (EFISPS)techni(lue. The two SPS responses peak at 360 nm and 410 nm were identified as direct transition and indirect transition of TiO2(001) plane, respectively. And it was found that the indirect transition of TiO2 was very sensitive to the external electrical field. These results indicate that SPS and EFlSPS are effective means to study the opto-electrical characteristics ofsemico nd uctors.
We used polarized surface photovoltage spectroscopy (PSPS) to study the photovoltage response of TiO\-2 single crystal (001) surface. Besides a band\|band transition at 355 nm and a indirect transition at 410 nm, we observed a new photovoltaic response at 380 nm in the PSPS spectrum which was assigned to the transition with relation to the surface state. Under different polarized directions, the intensity of photovoltaic responses at 380 nm and 410 nm changed regularly, which proved that the two transitions were interrelated to the atomic arrangement on the TiO\-2 single crystal (001) surface.
