Based on thermodynamic equilibrium theory,a chemical equilibrium model for GaN g rowth is given in electron cyclotron resonance plasma enhanced metalorganic chem ical vapor deposition (ECR-PEMOCVD) system.Calculation indicates that the growt h driving force are functions of growth conditions:group Ⅲ input partial press ure,input Ⅴ/Ⅲ ratio,and growth temperature.Furthermore,the growth phase diag rams of hexagonal and cubic GaN film growth are obtained,which are consistent wi th our experimental conditions to some extent.Through analysis,it is explained t he reason that high temperature and high input Ⅴ/Ⅲ ratio are favorable for he xagonal GaN film growth.This model can be extended to the similar systems used f or GaN single-crystal film growth.
